TGS2355

Qorvo
772-TGS2355
TGS2355

Tillverk:

Beskrivning:
RF-omkopplare, IC:er .5-6GHz SPDT 100 Watt GaN

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

Tillgänglighet

Lager:
Ej på lager
Fabrikens ledtid:
12 Veckor Uppskattad tillverkningstid i fabriken.
Minst: 50   Flera: 50
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:
Denna produkt levereras UTAN KOSTNAD

Prissättning (SEK)

Antal Enhetspris
Ext. pris
1.739,42 kr 86.971,00 kr
100 Beräkning

Alternativ förpackning

Tillverk: Artikelnummer:
Emballage:
Tray
Tillgänglighet:
På lager
Pris:
2.526,95 kr
Min:
1

Produktattribut Attributvärde Välj attribut
Qorvo
Produktkategori: RF-omkopplare, IC:er
RoHS-direktivet:  
SPDT
500 MHz
6 GHz
1.3 dB
40 dB
- 55 C
+ 150 C
SMD/SMT
Die
Si
TGS2355
Gel Pack
Märke: Qorvo
Hög styrspänning: - 48 V
Antal omkopplare: Single
Arbetsström: 1 mA
Pd - Effektavledning: 36.8 W
Produkttyp: RF Switch ICs
Fabriksförpackningskvantitet: 50
Underkategori: Wireless & RF Integrated Circuits
Del # Alias: 1097157
Enhetens vikt: 1 g
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Attribut som valts: 0

                        
Qorvo Die products:

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5-0810-13

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TARIC:
8542399000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99

TGS2355 High Power GaN Switch

Qorvo TGS2355 High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). Operating from 0.5GHz to 6.0GHz, the TGS2355 provides up to 100W input power handling with <1dB insertion over most of the operating band and greater than 40dB isolation.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.