HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

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STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
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531På lager
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel


STMicroelectronics IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac
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564På lager
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IGBT Transistors Si Through Hole
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT
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597På lager
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT
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IGBT Transistors Si SMD/SMT H2PAK-2
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT
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1 402På lager
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gte FieldStop IGBT 650V 80A
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4 575På lager
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
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IGBT Transistors Si SMD/SMT

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
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722På lager
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IGBT Transistors Si SMD/SMT D2PAK-3
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB series IGBT
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90På lager
600Förväntad 2026-08-24
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 600V 60A trench gate field-stop IGBT
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long
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406På lager
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
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496På lager
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IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
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600Förväntad 2026-04-01
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
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IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
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IGBT Transistors Si Through Hole TO-3P-3
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGBT
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311På lager
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IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs Trench gate H series 650V 80A HiSpd
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74På lager
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IGBT Transistors Si Through Hole TO-3P


STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT
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290På lager
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IGBT Transistors Si Through Hole TO-3PF
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa
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IGBT Transistors Si Through Hole TO-247-4
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGB
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219På lager
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IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs 650V 40A Trench Gate Field-Stop IGBT
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600Förväntad 2026-02-10
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
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Ledtid för icke lagerfört 14 Veckor
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 650V 60A Trench Gate Field-Stop IGBT
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Ledtid 14 Veckor
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
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Ledtid 14 Veckor
Min.: 1
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IGBT Transistors Si Through Hole TO-247-3