CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Vgs th - Gate-källans tröskelspänning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
MACOM GaN FET GaN HEMT DC-8.0GHz, 10 Watt
Datablad
496På lager
Min.: 1
Multipla: 1

Screw Mount 440166 N-Channel 120 V 1.5 A - 2.7 V - 40 C + 150 C
MACOM GaN FET GaN HEMT DC-4.0GHz, 45 Watt
Datablad
887På lager
Min.: 1
Multipla: 1

Screw Mount 440193 N-Channel 120 V 6 A - 3.8 V - 40 C + 150 C
MACOM GaN FET GaN HEMT
Datablad
311På lager
Min.: 1
Multipla: 1

Screw Mount 440223 N-Channel 125 V 18 A - 3.8 V - 40 C + 150 C 150 W
MACOM GaN FET GaN HEMT DC-6.0GHz, 25 Watt
Datablad
5På lager
1 200På beställningen
Min.: 1
Multipla: 1

Screw Mount 440166 N-Channel 120 V 3 A - 3.8 V - 40 C + 150 C
MACOM GaN FET 70W, DC-4.0GHz, 28V, RF Power GaN HEMT
Datablad
57På lager
30Förväntad 2026-06-04
Min.: 1
Multipla: 1

Screw Mount 440224 N-Channel 120 V 12 A - 3.8 V - 40 C + 150 C