CoolMOS™ 7 Superjunction MOSFETs

Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs are optimized for energy efficiency, power density, and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, adapters and chargers can be made smaller, lighter, and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
Infineon Technologies MOSFET:er LOW POWER_NEW
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363På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 300 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 22 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er CONSUMER
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1 795På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 40 C + 150 C 21 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
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185På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
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97På lager
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Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 18 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
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73På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 10 A 125 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
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473På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 168 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
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377På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 168 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.4 Ohms - 30 V, 30 V 3 V 10 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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958På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 280 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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506På lager
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Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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1 597På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 450 mOhms - 30 V, 30 V 3 V 24 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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770På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er CONSUMER
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1 699På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms - 30 V, 30 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er CONSUMER
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263På lager
12 500Förväntad 2026-04-16
MouseReel tillgängligt
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Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 18 A 180 mOhms - 20 V, 20 V 3 V 25 nC - 40 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er CONSUMER
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3 012På lager
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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9 A 300 mOhms - 20 V, 20 V 3 V 13 nC - 40 C + 150 C 41 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er CONSUMER
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95På lager
7 500Förväntad 2026-03-02
MouseReel tillgängligt
Min.: 1
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Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6 A 600 mOhms - 20 V, 20 V 3.5 V 9 nC - 40 C + 150 C 30 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er HIGH POWER_NEW
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21På lager
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Multipla: 1
Papprulle: 1 700

Si SMD/SMT HDSOP-10 N-Channel 1 Channel 600 V 47 A 50 mOhms - 20 V, 20 V 3 V 68 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET:er HIGH POWER_NEW
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307På lager
3 000Förväntad 2026-09-03
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Papprulle: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 41 A 53 mOhms - 20 V, 20 V 3 V 67 nC - 40 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 15A VSON-4
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71På lager
3 000Förväntad 2026-07-02
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Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 15 A 115 mOhms - 20 V, 20 V 3 V 35 nC - 40 C + 150 C 102 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er CONSUMER
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4 741På lager
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Si SMD/SMT SOT-223-3 N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 40 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er CONSUMER
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3 298På lager
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Papprulle: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms - 16 V, 16 V 2.5 V 10.5 nC - 40 C + 150 C 6.9 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er LOW POWER_NEW
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2 227På lager
3 000Förväntad 2026-03-25
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 4 A 1.2 Ohms - 20 V, 20 V 2.5 V 10 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er LOW POWER_NEW
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3 958På lager
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Multipla: 1
Papprulle: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 2.5 A 2 Ohms - 30 V, 30 V 3.5 V 7.5 nC - 55 C + 150 C 500 mW Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er HIGH POWER_NEW
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83På lager
500Förväntad 2026-05-29
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 120 mOhms - 20 V, 20 V 3 V 34 nC - 55 C + 150 C 92 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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648På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Tube