CoolMOS™ 7 Superjunction MOSFETs

Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs are optimized for energy efficiency, power density, and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, adapters and chargers can be made smaller, lighter, and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
Infineon Technologies MOSFET:er HIGH POWER_NEW
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370På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 346 mOhms - 20 V, 20 V 3.5 V 24 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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741På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 55 C + 150 C 21 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
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242På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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2 000På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 640 mOhms - 20 V, 20 V 2.5 V 17 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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3 217På lager
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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 1.7 Ohms - 20 V, 20 V 2.5 V 9 nC - 55 C + 150 C 24 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er LOW POWER_NEW
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924På lager
2 500Förväntad 2026-04-16
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Papprulle: 2 500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 1.5 A 4.5 Ohms - 30 V, 30 V 3 V 4 nC - 50 C + 150 C 13 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er CONSUMER
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7 759På lager
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Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 4 A 1.15 Ohms - 16 V, 16 V 2.5 V 4.7 nC - 40 C + 150 C 6.2 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er LOW POWER_NEW
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4 510På lager
6 000Förväntad 2026-03-02
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Papprulle: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 1.5 A 3.8 Ohms - 20 V, 20 V 2.5 V 4 nC - 55 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er LOW POWER_NEW
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212På lager
500Förväntad 2026-03-02
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 237 mOhms - 20 V, 20 V 3.5 V 18 nC - 55 C + 150 C 52 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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288På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 111 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 150 C 101 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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1 451På lager
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Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 900 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
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166På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 85 mOhms - 20 V, 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
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219På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 13 A 180 mOhms - 20 V, 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
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224På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
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58På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
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43På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13 A 168 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
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334På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13 A 168 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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26På lager
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Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 22 A 99 mOhms - 20 V, 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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396På lager
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Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 12 A 190 mOhms - 20 V, 20 V 3.5 V 42 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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642På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 77 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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218På lager
500Förväntad 2026-02-24
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er CONSUMER
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1 593På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 40 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
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862På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_NEW
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358På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 237 mOhms - 20 V, 20 V 3.5 V 18 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er CONSUMER
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1 509På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 300 mOhms - 20 V, 20 V 3 V 13 nC - 40 C + 150 C 22 W Enhancement CoolMOS Tube