CoolMOS™ CM8 650V Power MOSFETs

Infineon Technologies CoolMOS™ CM8 650V Power MOSFETs are designed according to the Superjunction (SJ) principle to offer low switching and conduction losses. These MOSFETs are suitable for hard and soft switching topologies due to the devices' commutation ruggedness. The CoolMOS™ CM8 650V MOSFETs feature fast design‑in through low ringing tendency and usage across the PFC and PWM stages. These MOSFETs enable simplified thermal management through an advanced die attach technique. The CoolMOS™ CM8 650V MOSFETs are RoHS compliant and fully qualified as per JEDEC standards for industrial applications. Typical applications include LLC resonant converters, AI servers, telecom power supplies, and data centers.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
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1 998På lager
240Förväntad 2026-12-31
Min.: 1
Multipla: 1

Si Through Hole PG-TO247-3 N-Channel 1 Channel 650 V 116 A 18 mOhms - 20 V to 20 V 4.7 V 173 nC - 55 C + 150 C 521 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
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566På lager
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Multipla: 1

Si Through Hole PG-TO247-4 N-Channel 1 Channel 650 V 62 A 40 mOhms - 20 V to 20 V 4.7 V 80 nC - 55 C + 150 C 329 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
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508På lager
2 250Förväntad 2026-07-02
Min.: 1
Multipla: 1
: 750

Si SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 650 V 270 A 8 mOhms - 20 V to 20 V 4.7 V 375 nC - 55 C + 150 C 1.249 kW Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
Datablad
685På lager
Min.: 1
Multipla: 1
: 750

Si SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 650 V 127 A 18 mOhms - 20 V to 20 V 4.7 V 173 nC - 55 C + 150 C 625 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
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1 515På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 650 V 134 A 18 mOhms - 20 V to 20 V 4.7 V 173 nC - 55 C + 150 C 694 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
Datablad
1 071På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 650 V 101 A 25 mOhms - 20 V to 20 V 4.7 V 124 nC - 55 C + 150 C 543 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
Datablad
1 843På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 650 V 67 A 40 mOhms - 20 V to 20 V 4.7 V 80 nC - 55 C + 150 C 390 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
Datablad
195På lager
Min.: 1
Multipla: 1

Si Through Hole PG-TO247-4 N-Channel 1 Channel 650 V 116 A 18 mOhms - 20 V to 20 V 4.7 V 173 nC - 55 C + 150 C 521 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
Datablad
117På lager
Min.: 1
Multipla: 1

Si Through Hole PG-TO247-3 N-Channel 1 Channel 650 V 62 A 70 mOhms - 20 V to 20 V 4.7 V 80 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
Datablad
447På lager
Min.: 1
Multipla: 1

Si Through Hole PG-TO247-3 N-Channel 1 Channel 650 V 45 A 60 mOhms - 20 V to 20 V 4.7 V 52 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
Datablad
194På lager
480Förväntad 2026-05-04
Min.: 1
Multipla: 1

Si Through Hole PG-TO247-3 N-Channel 1 Channel 650 V 90 A 25 mOhms - 20 V to 20 V 4.7 V 124 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er 650V CoolMOS CM8 Power Transistor
Datablad
163På lager
Min.: 1
Multipla: 1

Si Through Hole PG-TO247-4 N-Channel 1 Channel 650 V 90 A 25 mOhms - 20 V to 20 V 4.7 V 124 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube