LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.

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Antal RoHS ECAD-modell Transistorns polaritet
Teknologi
Id - Kontinuerlig dräneringsström
Vds - Dräneringskällans genombrottsspänning
Rds på - Dräneringskällans resistans
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STMicroelectronics RF MOSFET-transistorer 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
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Ej på lager
Min.: 100
Multipla: 100
Papprulle: 100

N-Channel Si 2.5 A 28 V 1 Ohms 945 MHz 16 dB 150 W + 200 C Through Hole LBB-4 Reel
STMicroelectronics RF MOSFET-transistorer RF Power LDMOS transistor HF up to 1.5 GHz
Datablad
Ledtid för icke lagerfört 28 Veckor
Min.: 1
Multipla: 1

N-Channel Si 9 A 90 V 1.5 GHz + 200 C SMD/SMT M243-3 Bulk