60V TrenchT3 HiPerFET Power MOSFETs

IXYS 60V TrenchT3™ HiPerFET™ Power MOSFETs are ultra-low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1mΩ and withstand a junction temperature up to +175°C. The series is also avalanche rated at high avalanche current levels. Due to the high-current carrying capability of the TrenchT3 HiPerFET Power MOSFETs, paralleling multiple devices may not be necessary. This simplifies the power system and improves its reliability at the same time. The fast intrinsic body diode of TrenchT3 HiPerFET MOSFETs helps achieve high efficiency, especially during high-speed switching. IXYS 60V TrenchT3 HiPerFET Power MOSFETs are available in TO-220, TO-263, and TO-247 international standard size packages for design flexibility.

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Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning

IXYS MOSFET:er 60V/220A TrenchT3 Ej på lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 60 V 220 A 4 mOhms - 20 V, 20 V 2 V 136 nC - 55 C + 175 C 440 W Enhancement HiPerFET Tube
IXYS MOSFET:er 60V/270A TrenchT3 Ej på lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 270 A 3.1 mOhms - 20 V, 20 V 2 V 200 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube