600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Qg), very low recovery charge (Qrr), low recovery time (trr), and an excellent RDS(on) per area.

Resultat: 10
Välj Bild Artikelnummer
 Tillverk:
Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet.
Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
STMicroelectronics MOSFET:er N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
Datablad
508På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 71 mOhms - 25 V, 25 V 3.25 V 54 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.094 Ohm typ., 25 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8
Datablad
2 682På lager
Min.: 1
Multipla: 1
Papprulle: 3 000

Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 25 A 110 mOhms - 25 V, 25 V 3.25 V 44 nC - 55 C + 150 C 160 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET:er N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET in a TO-247 long lea
Datablad
589På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 71 mOhms - 25 V, 25 V 3.25 V 54 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package
Datablad
390På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 72 A 36 mOhms - 25 V, 25 V 3.25 V 117 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package
Datablad
488På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 195 mOhms - 25 V, 25 V 3.25 V 24 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package
Datablad
126På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 42 mOhms - 25 V, 25 V 3.25 V 99 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in TO-220FP package
Datablad
Ledtid för icke lagerfört 14 Veckor
Min.: 1 000
Multipla: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 195 mOhms - 25 V, 25 V 3.25 V 24 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package
Datablad
Ledtid 16 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 72 A 36 mOhms - 25 V, 25 V 3.25 V 106 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO-247 long lead
Datablad
Ledtid för icke lagerfört 16 Veckor
Min.: 600
Multipla: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 41 mOhms - 25 V, 25 V 3.25 V 106 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 long lea
Datablad
Ledtid för icke lagerfört 16 Veckor
Min.: 600
Multipla: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 42 mOhms - 25 V, 25 V 3.25 V 99 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube