FRDMGD3160HB8EVM

NXP Semiconductors
771-FRDMGD3160HB8EVM
FRDMGD3160HB8EVM

Tillverk:

Beskrivning:
Strömhantering, IC-utvecklingsverktyg Half-Bridge Evaluation Board for P6 IGBT/SiC Modules

Tillgänglighet

Lager:
Ej på lager
Fabrikens ledtid:
15 Veckor Uppskattad tillverkningstid i fabriken.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:
Denna produkt levereras UTAN KOSTNAD

Prissättning (SEK)

Antal Enhetspris
Ext. pris
5 372,28 kr 5 372,28 kr

Produktattribut Attributvärde Välj attribut
NXP
Produktkategori: Strömhantering, IC-utvecklingsverktyg
RoHS-direktivet: N
Evaluation Boards
Gate Driver
25 V
GD3160
GD3160
Märke: NXP Semiconductors
Produkttyp: Power Management IC Development Tools
Fabriksförpackningskvantitet: 1
Underkategori: Development Tools
Del # Alias: 935437116598
Hittade produkter:
Markera minst en kryssruta för att visa liknande produkter
Markera minst en kryssruta ovan för att visa liknande produkter i denna kategori.
Attribut som valts: 0

TARIC:
8473302000
USHTS:
8471500150
ECCN:
EAR99

FRDM Development Boards

NXP Semiconductors FRDM Development Boards include low-cost, compact MCU and MPU boards with an easy development journey and an extensive ecosystem to simplify user designs. The FRDM ecosystem includes comprehensive software/tools, modular hardware, and access to solution-driven examples.

FRDMGD3160HB8EVM Evaluation Kit

NXP Semiconductors FRDMGD3160HB8EVM Evaluation Kit is a demonstration and development platform for the GD3160 Single-Channel Gate Drivers. The GD3160 Gate Drivers are designed to drive SiC and IGBT modules for xEV traction inverters, OBC, and DC-DC converters. The GD3160 features integrated galvanic isolation, a programmable interface via SPI, and advanced programmable protection options, such as over-temperature, desaturation, and current sense protection. The GD3160 Gate Drivers capably drive SiC MOSFETs and IGBT gates directly utilizing high-performance switching, low dynamic on-resistance, and rail-to-rail gate voltage control.