DTMOSV Super Junction MOSFETs

Toshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance RDS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.

Resultat: 12
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning
Toshiba MOSFET:er N-Ch DTMOSV 600V 60W 380pF 7.0A 1 900På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 560 mOhms - 30 V, 30 V 4 V 14.5 nC - 55 C + 150 C 60 W Enhancement DTMOSV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er N-Ch DTMOSV 600V 35W 730pF 11.5A 1 043På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 290 mOhms - 30 V, 30 V 4 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSV Tube
Toshiba MOSFET:er N-Ch DTMOSV 600V 80W 590pF 9.7A 3 850På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 4 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSV Reel, Cut Tape
Toshiba MOSFET:er N-Ch DTMOSV 650V 100W 730pF 11.5A 3 673På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 11.5 A 290 mOhms - 30 V, 30 V 4 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSV Reel, Cut Tape
Toshiba MOSFET:er N-Ch DTMOSV 650V 60W 380pF 7.0A 1 367På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 7 A 560 mOhms - 30 V, 30 V 4 V 14.5 nC - 55 C + 150 C 60 W Enhancement DTMOSV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er N-Ch DTMOSV 650V 35W 730pF 11.5A 117På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.5 A 290 mOhms - 30 V, 30 V 4 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSV Tube
Toshiba MOSFET:er N-Ch DTMOSV 650V 100W 730pF 11.5A 751På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11.5 A 290 mOhms - 30 V, 30 V 4 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSV Reel, Cut Tape
Toshiba MOSFET:er N-Ch DTMOSV 650V 30W 380pF 7.0A 177På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7 A 560 mOhms - 30 V, 30 V 4 V 14.5 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube
Toshiba MOSFET:er N-Ch DTMOSV 600V 30W 590pF 9.7A Ej på lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 4 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube
Toshiba MOSFET:er TO-220SIS PD=30W 1MHz PWR MOSFET TRNS Ej på lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9.7 A 380 mOhms - 30 V, 30 V 4 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube
Toshiba MOSFET:er N-Ch DTMOSV 650V 80W 590pF 9.7A Ej på lager
Min.: 2 000
Multipla: 2 000
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 9.7 A 380 mOhms - 30 V, 30 V 4 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSV Reel
Toshiba MOSFET:er N-Ch DTMOSV 600V 30W 380pF 7.0A Ledtid för icke lagerfört 25 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 560 mOhms - 30 V, 30 V 4 V 14.5 nC - 55 C + 150 C 30 W Enhancement DTMOSV Tube