DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning

Toshiba MOSFET:er MOSFET NChtrr135ns 0.082ohm DTMOS
Datablad
3På lager
30Förväntad 2026-07-17
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 82 mOhms - 30 V, 30 V 4.5 V 105 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
5På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 80 mOhms - 30 V, 30 V 3 V 115 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er MOSFET NChannel 068ohm DTMOS
Datablad
50På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 35 A 68 mOhms - 30 V, 30 V 3.5 V 100 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er MOSFET NChtrr130ns 0.08ohm DTMOS
Datablad
9På lager
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 80 mOhms - 30 V, 30 V 4.5 V 115 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch DTMOSIV 600 V 50W 4100pF 38.8A
Datablad
85På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 38.8A 270W FET 600V 4100pF 135nC
Datablad
13På lager
50Förväntad 2026-03-16
Min.: 1
Multipla: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 38.8A 270W FET 600V 4100pF 110nC
Datablad
25På lager
Min.: 1
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Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 65 mOhms - 30 V, 30 V 2.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
Datablad
40På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er TO247(OS) PD=400W 1MHz PWR MOSFET TRNS
Datablad
30På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 57 mOhms - 30 V, 30 V 4.5 V 185 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er N-Ch Power MOSFET Transistor
Datablad
57På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 55 mOhms - 30 V, 30 V 2.5 V 160 nC + 150 C 400 W Enhancement Tube
Toshiba MOSFET:er N-Ch 61.8A 400W FET 600V 3500pF 180nC
Datablad
25På lager
Min.: 1
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Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.7 V 180 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er DTMOSIV 600V 45mOhm 61.8A 400W 6500pF
Datablad
104På lager
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 36 mOhms - 30 V, 30 V 3 V 205 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er DTMOSIV 600V 40mOhm 61.8A 400W 6500pF
Datablad
10På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.7 V 180 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 6.2A 30W FET 600V 390pF 12nC
Datablad
169På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 30 V, 30 V 3.7 V 12 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC
Datablad
197På lager
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Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 30 V, 30 V 3.7 V 12 nC - 55 C + 150 C 60 W DTMOSIV Tube
Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
86På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 540 mOhms - 30 V, 30 V 3 V 16 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 7A 30W FET 600V 490pF 15nC
Datablad
44På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 600 mOhms - 30 V, 30 V 2.7 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
114På lager
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 6.8 A 640 mOhms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 7A 60W FET 600V 490pF 15nC
Datablad
709På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 500 mOhms - 30 V, 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
446På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6.8 A 660 mOhms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A
Datablad
144På lager
Min.: 1
Multipla: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 7 A 500 mOhms - 30 V, 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er POWER MOSFET TRANSISTOR TO-247-4L PD=190W F=1MHZ
Datablad
40På beställningen
Min.: 1
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Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 24 A 110 mOhms - 10 V, 10 V 3 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFET:er N-Ch 15.8A 130W FET 600V 1350pF 38nC
Datablad
80Förväntad 2026-06-15
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 30 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
Datablad
30Förväntad 2026-02-20
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
Datablad
Ledtid för icke lagerfört 32 Veckor
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 9.7 A 380 mOhms - 30 V, 30 V 2.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube