DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

Resultat: 113
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning
Toshiba MOSFET:er N-Ch 800V 1150pF 19nC 9.5A 40W 132På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9.5 A 460 mOhms - 20 V, 20 V 3 V 19 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 9.7A 80W FET 600V 700pF 20nC 326På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET:er POWER MOSFET TRANSISTOR TO-247 PD=190W F=1MHZ 40På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 24 A 110 mOhms - 10 V, 10 V 3 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFET:er MOSFET NChannel 0.33ohm DTMOS 190På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.1 A 330 mOhms - 30 V, 30 V 3.5 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch MOS 12A 500V 45W 1350pF 0.52 138På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12 A 520 mOhms - 30 V, 30 V 2 V 25 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC 79På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 300 mOhms - 30 V, 30 V 2.7 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 11.5A 110W FET 600V 890pF 25nC 76På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 300 mOhms - 30 V, 30 V 3.7 V 25 nC - 55 C + 150 C 110 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er Power MOSFET N-Channel 68På lager
2 000Förväntad 2026-10-16
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel

Toshiba MOSFET:er MOSFET NChannel 0.22ohm DTMOS 99På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 3.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC 99På lager
Min.: 1
Multipla: 1

Si N-Channel 1 Channel DTMOSIV Tube
Toshiba MOSFET:er N-Ch 15.8A 130W FET 600V 1350pF 38nC 57På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 30 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS 73På lager
Min.: 1
Multipla: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 4.5 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er TO-3PN PD=130W 1MHz PWR MOSFET TRNS 74På lager
Min.: 1
Multipla: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tray

Toshiba MOSFET:er DTMOSIV 600V 190mOhm 15.8A 130W 1350pF 17På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er TO-220SIS PD=45W 1MHz PWR MOSFET TRNS 6På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.3 A 200 mOhms - 30 V, 30 V 3.5 V 45 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 800V 2050pF 32nC 17A 45W 154På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms - 20 V, 20 V 3 V 32 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 145På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18.5 A 190 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er MOSFET NChtrr100ns 0.25ohm DTMOS 84På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 20 A 150 mOhms - 30 V, 30 V 4.5 V 55 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er TO-220 PD=165W 1MHz PWR MOSFET TRNS 80På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 175 mOhms - 30 V, 30 V 4.5 V 55 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch DTMOSIV 600 V 165W 1680pF 20A 58På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 130 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er TO-3PN PD=165W 1MHz PWR MOSFET TRNS 100På lager
Min.: 1
Multipla: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 20 A 155 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tray

Toshiba MOSFET:er Power MOSFET N-Channel 98På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 150 mOhms - 30 V, 30 V 3 V 55 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er N-Ch DTMOSIV 600 V 165W 1680pF 20A 93På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 130 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er Power MOSFET N-Channel 31På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 27.6 A 94 mOhms - 30 V, 30 V 2.5 V 75 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS 60På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 27.6 A 130 mOhms - 30 V, 30 V 4.5 V 90 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube