DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
Toshiba MOSFET:er N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A
Datablad
150På lager
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Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er MOSFET NChannel 0.33ohm DTMOS
Datablad
53På lager
250Förväntad 2026-04-17
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11.1 A 330 mOhms - 30 V, 30 V 3.5 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch MOS 12A 500V 45W 1350pF 0.52
Datablad
251På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12 A 520 mOhms - 30 V, 30 V 2 V 25 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC
Datablad
94På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 300 mOhms - 30 V, 30 V 2.7 V 25 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 11.5A 110W FET 600V 890pF 25nC
Datablad
78På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11.5 A 300 mOhms - 30 V, 30 V 3.7 V 25 nC - 55 C + 150 C 110 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er MOSFET NChannel 0.22ohm DTMOS
Datablad
128På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 3.5 V 35 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er MOSFET NChannel 0.22ohm DTMOS
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31På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 3.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 15.8A 40W FET 600V 1350pF 43nC
Datablad
156På lager
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Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 4.5 V 43 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC
Datablad
121På lager
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Si N-Channel 1 Channel DTMOSIV Tube
Toshiba MOSFET:er TO-3PN PD=130W 1MHz PWR MOSFET TRNS
Datablad
79På lager
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Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tray

Toshiba MOSFET:er DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
Datablad
19På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er TO-220SIS PD=45W 1MHz PWR MOSFET TRNS
Datablad
7På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.3 A 200 mOhms - 30 V, 30 V 3.5 V 45 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 800V 2050pF 32nC 17A 45W
Datablad
254På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms - 20 V, 20 V 3 V 32 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 800V 2050pF 32nC 17A 180W
Datablad
50På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms - 20 V, 20 V 3 V 32 nC - 55 C + 150 C 180 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ
Datablad
150På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18.5 A 190 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er MOSFET NChtrr100ns 0.25ohm DTMOS
Datablad
92På lager
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Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 20 A 150 mOhms - 30 V, 30 V 4.5 V 55 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er TO-220 PD=165W 1MHz PWR MOSFET TRNS
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100På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 175 mOhms - 30 V, 30 V 4.5 V 55 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch DTMOSIV 600 V 165W 1680pF 20A
Datablad
68På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 130 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er TO-3PN PD=165W 1MHz PWR MOSFET TRNS
Datablad
50På lager
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Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 20 A 155 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tray

Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
98På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 150 mOhms - 30 V, 30 V 3 V 55 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er N-Ch DTMOSIV 600 V 165W 1680pF 20A
Datablad
58På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 130 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er Power MOSFET N-Channel
Datablad
131På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 27.6 A 94 mOhms - 30 V, 30 V 2.5 V 75 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube

Toshiba MOSFET:er TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS
Datablad
60På lager
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 27.6 A 130 mOhms - 30 V, 30 V 4.5 V 90 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 30.8A 45W FET 600V 3000pF 86nC
Datablad
43På lager
50Förväntad 2026-03-16
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET:er N-Ch 30.8A 290W FET 600V 3000pF 86nC
Datablad
34På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube