RGE Field Stop Trench IGBTs

ROHM Semiconductor RGE Field Stop Trench IGBTs feature low collector-emitter saturation voltage, low switching loss, and a short circuit withstand time of 5μs. The  ROHM Semiconductor RGE IGBTs ensure reliable operation under high-stress conditions. The built-in fast and soft recovery FRD enhances efficiency, while Pb-free lead plating ensures RoHS compliance. Perfect for general inverters, Uninterruptible Power Supply (UPS) systems, power conditioners, and welders, the RGE series provides a robust solution for modern power management needs.

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Antal RoHS ECAD-modell Teknologi
Paket/låda
Monteringsstil
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Maximal grind-emitterspänning
Kontinuerlig kollektorström vid 25 C
Pd - Effektavledning
Minsta drifttemperatur
Maximal drifttemperatur
Förpackning
ROHM Semiconductor IGBTs 5 s Short-Circuit Tolerance, 650V 50A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
Datablad
570På lager
Min.: 1
Multipla: 1

Si TO-247GE-3 Through Hole Single 650 V 1.65 V 30 V 74 A 230 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 5 s Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
Datablad
590På lager
Min.: 1
Multipla: 1

Si TO-247GE-3 Through Hole Single 650 V 1.65 V 30 V 51 A 166 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 5 s Short-Circuit Tolerance, 650V 40A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
Datablad
600På lager
Min.: 1
Multipla: 1

Si TO-247GE-3 Through Hole Single 650 V 1.65 V 30 V 63 A 200 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 5 s Short-Circuit Tolerance, 650V 75A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
Datablad
600På lager
Min.: 1
Multipla: 1

Si TO-247GE-3 Through Hole Single 650 V 1.65 V 30 V 102 A 306 W - 40 C + 175 C Tube