QuadRAM Devices

ISSI QuadRAM Devices contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array. These arrays are organized as 1M words by 8 bits, 2M words by 8 bits, and 4M words by 8 bits for 8Mb, 16Mb, and 32Mb, respectively. The QuadRAM devices support a Quad DDR interface that is compatible with JEDEC standard x4 xSPI flash. These devices support low signal count, hidden refresh operation, and automotive temperature operation. Due to DDR operation, the minimum transferred data size is a byte (8 bits) through 4 SIO pins.

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Antal RoHS ECAD-modell Minnesstorlek
Organisation
Åtkomsttid
Maximal klockfrekvens
Gränssnittstyp
Maximal matningsspänning
Minimal matningsspänning
Strömstyrka - Max
Minsta drifttemperatur
Maximal drifttemperatur
Monteringsstil
Paket/låda

ISSI SRAM 16Mb, QUADRAM, 2.7V-3.6V, 133MHz, 24-ball TFBGA, RoHS
Datablad
375På lager
Min.: 1
Multipla: 1
Max.: 8

16 Mbit 4 M x 4 7 ns 133 MHz SPI 3.6 V 2.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24

ISSI SRAM 32Mb, QUADRAM, 2.7V-3.6V, 133MHz, 24-ball TFBGA, RoHS
Datablad
389På lager
Min.: 1
Multipla: 1
Max.: 1

32 Mbit 8 M x 4 7 ns 133 MHz SPI 3.6 V 2.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24

ISSI SRAM 8Mb, QUADRAM, 2.7V-3.6V, 133MHz, 24-ball TFBGA, RoHS
Datablad
415På lager
Min.: 1
Multipla: 1
Max.: 200

8 Mbit 2 M x 4 7 ns 133 MHz SPI 3.6 V 2.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24

ISSI SRAM 16Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS
Datablad
464På lager
Min.: 1
Multipla: 1

16 Mbit 4 M x 4 5 ns 200 MHz SPI 1.95 V 1.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24

ISSI SRAM 8Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS
Datablad
262På lager
Min.: 1
Multipla: 1
Max.: 200

8 Mbit 2 M x 4 5 ns 200 MHz SPI 1.95 V 1.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24
ISSI IS66WVQ8M4DALL-200BLI
ISSI SRAM 32Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS
Datablad
46På lager
Min.: 1
Multipla: 1
Max.: 13

32 Mbit 8 M x 4 5 ns 200 MHz SPI 1.95 V 1.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24