|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
300,84 kr
-
1 054På lager
|
Mouser artikelnummer
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 054På lager
|
|
|
300,84 kr
|
|
|
256,59 kr
|
|
|
224,43 kr
|
|
|
224,43 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
209,06 kr
-
1 189På lager
|
Mouser artikelnummer
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 189På lager
|
|
|
209,06 kr
|
|
|
171,13 kr
|
|
|
151,07 kr
|
|
|
151,07 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
159,79 kr
-
3 648På lager
|
Mouser artikelnummer
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3 648På lager
|
|
|
159,79 kr
|
|
|
127,97 kr
|
|
|
110,64 kr
|
|
|
110,64 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
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SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
139,41 kr
-
433På lager
|
Mouser artikelnummer
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
433På lager
|
|
|
139,41 kr
|
|
|
104,10 kr
|
|
|
90,03 kr
|
|
|
85,24 kr
|
|
|
72,38 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
115,21 kr
-
1 900På lager
|
Mouser artikelnummer
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 900På lager
|
|
|
115,21 kr
|
|
|
93,74 kr
|
|
|
78,04 kr
|
|
|
69,65 kr
|
|
|
59,19 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
89,38 kr
-
475På lager
|
Mouser artikelnummer
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
475På lager
|
|
|
89,38 kr
|
|
|
67,69 kr
|
|
|
56,46 kr
|
|
|
50,25 kr
|
|
|
44,80 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
66,16 kr
-
1 651På lager
|
Mouser artikelnummer
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 651På lager
|
|
|
66,16 kr
|
|
|
48,40 kr
|
|
|
39,13 kr
|
|
|
34,77 kr
|
|
|
29,76 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
56,90 kr
-
752På lager
|
Mouser artikelnummer
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
752På lager
|
|
|
56,90 kr
|
|
|
39,79 kr
|
|
|
32,16 kr
|
|
|
28,45 kr
|
|
|
24,42 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
48,07 kr
-
256På lager
-
1 000Förväntad 2026-03-05
|
Mouser artikelnummer
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
256På lager
1 000Förväntad 2026-03-05
|
|
|
48,07 kr
|
|
|
31,94 kr
|
|
|
24,31 kr
|
|
|
22,24 kr
|
|
|
18,64 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
43,93 kr
-
259På lager
-
5 000På beställningen
|
Mouser artikelnummer
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
259På lager
5 000På beställningen
Lager:
259 Kan skickas omedelbart
På beställningen:
1 000 Förväntad 2026-03-05
4 000 Förväntad 2026-03-19
Fabrikens ledtid:
26 Veckor
|
|
|
43,93 kr
|
|
|
29,10 kr
|
|
|
21,80 kr
|
|
|
19,73 kr
|
|
|
16,79 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
78,04 kr
-
9På lager
-
2 000Förväntad 2026-06-11
|
Mouser artikelnummer
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
9På lager
2 000Förväntad 2026-06-11
|
|
|
78,04 kr
|
|
|
54,61 kr
|
|
|
44,25 kr
|
|
|
41,42 kr
|
|
|
35,97 kr
|
|
Min.: 1
Multipla: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|