|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
328,81 kr
-
1 073På lager
-
1 000Förväntad 2026-10-15
|
Mouser artikelnummer
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 073På lager
1 000Förväntad 2026-10-15
|
|
|
328,81 kr
|
|
|
246,87 kr
|
|
|
246,87 kr
|
|
Min.: 1
Multipla: 1
Max.: 10
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
175,43 kr
-
3 317På lager
|
Mouser artikelnummer
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3 317På lager
|
|
|
175,43 kr
|
|
|
124,97 kr
|
|
|
111,41 kr
|
|
|
110,03 kr
|
|
|
104,09 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
237,33 kr
-
710På lager
|
Mouser artikelnummer
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
710På lager
|
|
|
237,33 kr
|
|
|
172,14 kr
|
|
|
163,77 kr
|
|
|
160,17 kr
|
|
|
151,58 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
147,45 kr
-
386På lager
|
Mouser artikelnummer
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
386På lager
|
|
|
147,45 kr
|
|
|
103,99 kr
|
|
|
89,15 kr
|
|
|
84,38 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
126,46 kr
-
1 673På lager
|
Mouser artikelnummer
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 673På lager
|
|
|
126,46 kr
|
|
|
88,40 kr
|
|
|
88,40 kr
|
|
Min.: 1
Multipla: 1
Max.: 60
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
98,69 kr
-
316På lager
|
Mouser artikelnummer
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
316På lager
|
|
|
98,69 kr
|
|
|
68,05 kr
|
|
|
52,89 kr
|
|
|
50,03 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
71,66 kr
-
841På lager
|
Mouser artikelnummer
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
841På lager
|
|
|
71,66 kr
|
|
|
48,55 kr
|
|
|
35,51 kr
|
|
|
34,66 kr
|
|
|
32,75 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
61,69 kr
-
649På lager
|
Mouser artikelnummer
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
649På lager
|
|
|
61,69 kr
|
|
|
39,86 kr
|
|
|
30,00 kr
|
|
|
28,30 kr
|
|
|
26,82 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
52,68 kr
-
1 802På lager
|
Mouser artikelnummer
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 802På lager
|
|
|
52,68 kr
|
|
|
35,19 kr
|
|
|
25,12 kr
|
|
|
23,00 kr
|
|
|
21,73 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
47,59 kr
-
6 769På lager
|
Mouser artikelnummer
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
6 769På lager
|
|
|
47,59 kr
|
|
|
31,59 kr
|
|
|
22,47 kr
|
|
|
20,03 kr
|
|
|
19,93 kr
|
|
|
18,87 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
82,26 kr
-
1 968Förväntad 2026-07-09
|
Mouser artikelnummer
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 968Förväntad 2026-07-09
|
|
|
82,26 kr
|
|
|
56,18 kr
|
|
|
41,55 kr
|
|
|
39,33 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|