Silicon Carbide (SiC) Devices

IXYS Silicon Carbide (SiC) Devices are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. IXYS focuses on developing the most reliable Silicon Carbide Semiconductor Devices available.

Resultat: 7
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Konfiguration If - Framström Vrrm - Repetativ backspänning Vf - Framspänning Ifsm - Stötström framåt Ir - Motström Minsta drifttemperatur Maximal drifttemperatur Förpackning
IXYS SiC-schottkydioder Pwr Diode Disc-Schottky SOT-227B miniblc 90På lager
Min.: 1
Multipla: 1

Screw Mount SOT-227B-4 Dual 105 A 1.2 kV 1.6 V 1.15 kA 140 uA - 40 C + 150 C Tube
IXYS SiC-schottkydioder Pwr Diode Disc-Schottky SOT-227B miniblc 5På lager
Min.: 1
Multipla: 1

Screw Mount SOT-227B-4 Dual 44 A 1.2 kV 1.5 V 1.15 kA 35 uA - 40 C + 150 C Tube
IXYS SiC-schottkydioder Power Diode Disc-Schottky ISOPLUS247 Ej på lager
Min.: 30
Multipla: 30

Through Hole ISO247-3 Series 22 A 1.2 kV 1.5 V 750 A 30 uA - 40 C + 150 C Tube
IXYS SiC-schottkydioder Power Diode Disc-Schottky ISOPLUS247 Ej på lager
Min.: 30
Multipla: 30

Through Hole ISO247-3 Series 31.7 A 1.2 kV 1.5 V 1 kA 35 uA - 40 C + 150 C Tube
IXYS SiC-schottkydioder Power Diode Disc-Schottky ISOPLUS247 Ej på lager
Min.: 30
Multipla: 30

Through Hole ISO247-3 Dual Anode Common Cathode 22 A 1.2 kV 1.5 V 750 A 30 uA - 40 C + 150 C Tube
IXYS SiC-schottkydioder Power Diode Disc-Schottky ISOPLUS247 Ej på lager
Min.: 30
Multipla: 30

Through Hole ISO247-3 Dual Anode Common Cathode 31.7 A 1.2 kV 1.5 V 1 kA 35 uA - 40 C + 150 C Tube
IXYS SiC-schottkydioder Pwr Diode Disc-Schottky SOT-227B miniblc Ej på lager
Min.: 100
Multipla: 100

Screw Mount SOT-227B-4 Dual 73 A 1.2 kV 1.5 V 1.15 kA 70 uA - 40 C + 150 C Tube