S29GL01GT/512GT MIRRORBIT™ Eclipse™ Flash Memory

Infineon Technologies S29GL01GT / S29GL512GT MIRRORBIT™ Eclipse™ Flash Memory offers a page access time as fast as 15ns with a corresponding random access time as quick as 100ns. These devices feature a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This feature results in faster effective programming time than standard programming algorithms. The Infineon Technologies S29GL01GT / S29GL512GT is ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.

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SMD/SMT FBGA-64 S29GL01GT 1 Gbit 2.7 V 3.6 V 60 mA Parallel 128 M x 8/64 M x 16 8 bit/16 bit Asynchronous - 40 C + 85 C Tray
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SMD/SMT TSOP-56 S29GL512T 512 Mbit 2.7 V 3.6 V 60 mA Parallel 64 M x 8/32 M x 16 8 bit/16 bit Asynchronous - 40 C + 85 C Tray
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SMD/SMT TSOP-56 S29GL512T 512 Mbit 2.7 V 3.6 V 60 mA Parallel 64 M x 8/32 M x 16 8 bit/16 bit Asynchronous - 40 C + 85 C Reel, Cut Tape
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Infineon Technologies NOR-flash NOR
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SMD/SMT FBGA-64 S29GL01GT 1 Gbit 2.7 V 3.6 V 60 mA Parallel 128 M x 8/64 M x 16 8 bit/16 bit Asynchronous - 40 C + 85 C Tray