SiCPAK™ F/G 1200V High-Power Modules

GeneSiC Semiconductor SiCPAK™ F/G 1200V High-Power Modules are designed for superior performance and robustness while meeting industry-standard footprints with pin-to-pin combability. These modules are robust, high-voltage, high-efficiency SiC MOSFETs, critical for reliable, harsh-environment, high-power applications. The SiCPAK™ F/G Modules enable expanded applications ranging from 10s kW to MW in rail, EV, fast charging, industry, solar, wind, and energy storage. Epoxy-resin potting technology provides high reliability and improved power/temperature cycling.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs th - Gate-källans tröskelspänning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Serie
Förpackning
GeneSiC Semiconductor MOSFET-moduler 1200V 5mohm Half-Bridge SiCPAK G SiC Module
Datablad
96På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK G Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 5mohm Half-Bridge SiCPAK G SiC Module, TIM
Datablad
93På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK F Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 9mohm Full-Bridge SiCPAK G SiC Module
Datablad
96På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK G Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 9mohm Full-Bridge SiCPAK G SiC Module, TIM
Datablad
96På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 9mohm Half-Bridge SiCPAK F SiC Module
Datablad
71På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 9mohm Half-Bridge SiCPAK F SiC Module, TIM
Datablad
96På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 17mohm Half-Bridge SiCPAK F SiC Module
Datablad
96På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 17mohm Half-Bridge SiCPAK F SiC Module, TIM
Datablad
94På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 18mohm Full-Bridge SiCPAK F SiC Module
Datablad
96På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 18mohm Full-Bridge SiCPAK F SiC Module. TIM
Datablad
96På lager
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module
Datablad
96Förväntad 2026-04-17
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK G Tray
GeneSiC Semiconductor MOSFET-moduler 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module, TIM
Datablad
96Förväntad 2026-04-17
Min.: 1
Multipla: 1

SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK F Tray