Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

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Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 25 mOhm TO-247-4
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SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology SiC-schottkydioder UNRLS, FG, GEN2 SIC SBD
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SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology SiC-schottkydioder SIC SBD 1200 V 30 A TO-247
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SiC Schottky Diodes Through Hole TO-247-3
Microchip Technology SiC-schottkydioder 1200 V, 30 A SiC SBD
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Microchip Technology SiC-schottkydioder SIC SBD 1200 V 50 A TO-247
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SiC Schottky Diodes Through Hole TO-247-2

Microchip Technology SiC-schottkydioder SIC SBD 1200 V 50 A TO-247
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SiC Schottky Diodes Through Hole TO-247-3
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SiC Schottky Diodes Through Hole TO-220-2
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SiC Schottky Diodes SMD/SMT D3PAK
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