|
|
SiC-MOSFET:ar SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
185,18 kr
-
830På lager
-
NRND
|
Mouser artikelnummer
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC-MOSFET:ar SIC_DISCRETE
|
|
830På lager
|
|
|
185,18 kr
|
|
|
134,20 kr
|
|
|
133,56 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
146,39 kr
-
773På lager
|
Mouser artikelnummer
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
773På lager
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
47,38 kr
-
2På lager
-
11 000Förväntad 2026-09-03
|
Mouser artikelnummer
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
2På lager
11 000Förväntad 2026-09-03
|
|
|
47,38 kr
|
|
|
31,38 kr
|
|
|
22,37 kr
|
|
|
19,08 kr
|
|
|
19,08 kr
|
|
Min.: 1
Multipla: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
66,67 kr
-
392På lager
|
Mouser artikelnummer
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
392På lager
|
|
|
66,67 kr
|
|
|
38,58 kr
|
|
|
32,97 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
119,57 kr
-
41På lager
-
1 200Förväntad 2026-05-07
-
NRND
|
Mouser artikelnummer
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
|
|
41På lager
1 200Förväntad 2026-05-07
|
|
|
119,57 kr
|
|
|
72,61 kr
|
|
|
71,13 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
86,92 kr
-
116På lager
-
240Förväntad 2026-07-23
-
NRND
|
Mouser artikelnummer
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
|
|
116På lager
240Förväntad 2026-07-23
|
|
|
86,92 kr
|
|
|
52,58 kr
|
|
|
45,90 kr
|
|
|
45,79 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
68,58 kr
-
Ledtid för icke lagerfört 52 Veckor
-
NRND
|
Mouser artikelnummer
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
|
|
Ledtid för icke lagerfört 52 Veckor
|
|
|
68,58 kr
|
|
|
39,75 kr
|
|
|
36,46 kr
|
|
|
35,30 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Sverige