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SiC-MOSFET:ar SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
214,97 kr
-
735På lager
-
NRND
|
Mouser artikelnummer
726-AIMW120R045M1XKS
NRND
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Infineon Technologies
|
SiC-MOSFET:ar SIC_DISCRETE
|
|
735På lager
|
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214,97 kr
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172,89 kr
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151,47 kr
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148,82 kr
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Min.: 1
Multipla: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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52 A
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59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
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228 W
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Enhancement
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CoolSiC
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SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
64,24 kr
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370På lager
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Mouser artikelnummer
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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370På lager
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64,24 kr
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43,67 kr
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36,15 kr
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34,56 kr
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33,50 kr
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|
Min.: 1
Multipla: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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19 A
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182 mOhms
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- 7 V, + 23 V
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3.5 V
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13 nC
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- 55 C
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+ 175 C
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94 W
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Enhancement
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CoolSiC
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SiC-MOSFET:ar SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
144,37 kr
-
1 234På lager
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NRND
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Mouser artikelnummer
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
|
|
1 234På lager
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144,37 kr
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101,23 kr
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86,28 kr
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78,33 kr
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Granska
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74,52 kr
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Beräkning
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|
Min.: 1
Multipla: 1
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Through Hole
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TO-247-3
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N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
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- 5 V, + 23 V
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5.7 V
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62 nC
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- 55 C
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+ 150 C
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189 W
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Enhancement
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CoolSiC
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SiC-MOSFET:ar SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
117,13 kr
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29På lager
-
240På beställningen
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NRND
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Mouser artikelnummer
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
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|
29På lager
240På beställningen
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117,13 kr
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69,43 kr
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59,04 kr
|
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51,41 kr
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Min.: 1
Multipla: 1
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|
|
Through Hole
|
TO-247-4
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N-Channel
|
1 Channel
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650 V
|
39 A
|
64 mOhms
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- 5 V, + 23 V
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5.7 V
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33 nC
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- 55 C
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+ 150 C
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125 W
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Enhancement
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CoolSiC
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SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
55,01 kr
-
10 930Förväntad 2026-07-09
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Mouser artikelnummer
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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10 930Förväntad 2026-07-09
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55,01 kr
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36,15 kr
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26,50 kr
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23,64 kr
|
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20,99 kr
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Min.: 1
Multipla: 1
:
1 000
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|
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.7 kV
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5.2 A
|
1 Ohms
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- 10 V, + 20 V
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4.5 V
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5 nC
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- 55 C
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+ 175 C
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68 W
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Enhancement
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CoolSiC
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SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
167,90 kr
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2 160På beställningen
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Mouser artikelnummer
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2 160På beställningen
Fabrikens ledtid:
45 Veckor
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167,90 kr
|
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110,98 kr
|
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95,93 kr
|
|
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93,28 kr
|
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Min.: 1
Multipla: 1
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|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
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1.2 kV
|
56 A
|
40 mOhms
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- 7 V, + 23 V
|
5.7 V
|
63 nC
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- 55 C
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+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
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SiC-MOSFET:ar SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
84,38 kr
-
Ledtid för icke lagerfört 52 Veckor
-
NRND
|
Mouser artikelnummer
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
|
|
Ledtid för icke lagerfört 52 Veckor
|
|
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84,38 kr
|
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|
55,54 kr
|
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43,04 kr
|
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41,23 kr
|
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Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-4
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N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
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+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
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Sverige