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SiC-MOSFET:ar SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
173,31 kr
-
837På lager
|
Mouser artikelnummer
726-AIMW120R045M1XKS
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Infineon Technologies
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SiC-MOSFET:ar SIC_DISCRETE
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837På lager
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Min.: 1
Multipla: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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52 A
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59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
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228 W
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Enhancement
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CoolSiC
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|
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SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
44,58 kr
-
1 121På lager
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4 000Förväntad 2026-05-21
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Mouser artikelnummer
726-IMBF170R1K0M1XTM
|
Infineon Technologies
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SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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1 121På lager
4 000Förväntad 2026-05-21
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44,58 kr
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29,43 kr
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|
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22,13 kr
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|
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20,06 kr
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16,57 kr
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|
Min.: 1
Multipla: 1
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
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4.5 V
|
5 nC
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- 55 C
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+ 175 C
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68 W
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Enhancement
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CoolSiC
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SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
138,98 kr
-
872På lager
|
Mouser artikelnummer
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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|
872På lager
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138,98 kr
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93,09 kr
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86,44 kr
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|
Min.: 1
Multipla: 1
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Through Hole
|
TO-247-4
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N-Channel
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1 Channel
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1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
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+ 150 C
|
227 W
|
Enhancement
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CoolSiC
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SiC-MOSFET:ar SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
77,39 kr
-
332På lager
|
Mouser artikelnummer
726-IMZA65R048M1HXKS
|
Infineon Technologies
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
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|
332På lager
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77,39 kr
|
|
|
49,16 kr
|
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42,07 kr
|
|
|
41,42 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-4
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N-Channel
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1 Channel
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650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
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5.7 V
|
33 nC
|
- 55 C
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+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
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|
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SiC-MOSFET:ar SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
119,36 kr
-
153På lager
-
240Förväntad 2026-02-23
|
Mouser artikelnummer
726-IMW65R027M1HXKSA
|
Infineon Technologies
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
|
|
153På lager
240Förväntad 2026-02-23
|
|
|
119,36 kr
|
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|
72,27 kr
|
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|
64,09 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
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SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
64,31 kr
-
422På lager
|
Mouser artikelnummer
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
422På lager
|
|
|
64,31 kr
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37,06 kr
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30,96 kr
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28,34 kr
|
|
Min.: 1
Multipla: 1
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|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
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+ 175 C
|
94 W
|
Enhancement
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CoolSiC
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SiC-MOSFET:ar SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
69,32 kr
-
Ledtid för icke lagerfört 11 Veckor
|
Mouser artikelnummer
726-IMZA65R072M1HXKS
|
Infineon Technologies
|
SiC-MOSFET:ar SILICON CARBIDE MOSFET
|
|
Ledtid för icke lagerfört 11 Veckor
|
|
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69,32 kr
|
|
|
40,11 kr
|
|
|
32,92 kr
|
|
|
31,28 kr
|
|
Min.: 1
Multipla: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
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Sverige