QPD0020 GaN RF Power Transistors

Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

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Qorvo RF Bipolära transistorer DC-6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor 100På lager
Min.: 1
Multipla: 1
Papprulle: 100

Qorvo GaN FET DC-6GHz 35W 50V GaN Transistor Ledtid för icke lagerfört 16 Veckor
Min.: 500
Multipla: 500
Papprulle: 500