π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
Toshiba MOSFET:er Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ
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3 198På lager
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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 4.9 Ohms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET:er PLN MOS 900V 1300m (VGS=10V) TO-3PN
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2 986På lager
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Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms - 30 V, 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET:er PLN MOS 800V 1000m (VGS=10V) TO-220SIS
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163På lager
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Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 10 A 700 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET:er PLN MOS 900V 2000m (VGS=10V) TO-3PN
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60På lager
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Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray
Toshiba MOSFET:er PLN MOS 800V 1000m (VGS=10V) TO-3PN
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60På lager
Min.: 1
Multipla: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET:er TO252 900V 2A N-CH MOSFET
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13På lager
4 000Förväntad 2026-09-21
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: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 2 A 5.9 Ohms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET:er Pb-FPOWERMOSFETTRANSISTORTO-220SISPD=35WF=1MHZ
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290På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 3.5 Ohms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET:er PLN MOS 800V 1700m (VGS=10V) TO-220SIS
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159På lager
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Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.35 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET:er PLN MOS 900V 2000m (VGS=10V) TO-220SIS
Datablad
182På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET:er PLN MOS 900V 1300m (VGS=10V) TO-220SIS
Datablad
206På lager
150Förväntad 2026-07-23
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 9 A 1 Ohms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET:er Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
Datablad
250Förväntad 2026-06-15
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 2.5 A 4.6 Ohms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube