Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

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ROHM Semiconductor MOSFET-moduler Mod: 1200V 120A (w/ Diode)
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MOSFET Modules SiC Screw Mount Module
ROHM Semiconductor SiC-MOSFET:ar 650V 30A 134W SIC 80mOhm TO-247N
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SiC MOSFETS SiC Through Hole TO-247N-3
ROHM Semiconductor SiC-MOSFET:ar TO247 650V 70A N-CH SIC
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235På lager
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SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor SiC-MOSFET:ar TO247 650V 39A N-CH SIC
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SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor SiC-MOSFET:ar 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
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529På lager
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SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 55A N-CH SIC
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61På lager
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SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor MOSFET-moduler SIC Pwr Module Half Bridge
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MOSFET Modules SiC Screw Mount Module
ROHM Semiconductor SiC-schottkydioder SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen
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1 701På lager
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SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor SiC-MOSFET:ar 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
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87På lager
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SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 31A N-CH SIC
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147På lager
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SiC MOSFETS SiC Through Hole TO-247-4
ROHM Semiconductor SiC-schottkydioder RECT 1.2KV 10A RDL SIC SKY
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752På lager
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SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor SiC-schottkydioder RECT 1.2KV 20A RDL SIC SKY
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1 391På lager
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SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor SiC-MOSFET:ar 1200V 40A 262W SIC 80mOhm TO-247N
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117På lager
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SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC-MOSFET:ar Nch 1200V 95A SiC TO-247N
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66På lager
450Förväntad 2026-08-12
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SiC MOSFETS SiC Through Hole TO-247N-3
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V SiC 70A 30mOhm TrenchMOS
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102På lager
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SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC-MOSFET:ar N-Ch 1200V SiC 55A 40mOhm TrenchMOS
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322På lager
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SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V SiC 39A 60mOhm TrenchMOS
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839På lager
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SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC-schottkydioder SiC, SBD 650V 15A D2PAK
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46På lager
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SiC Schottky Diodes SMD/SMT TO-263AB-3
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V SiC 93A 22mOhm TrenchMOS
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5På lager
450Förväntad 2026-06-25
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SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC-MOSFET:ar N-Ch 650V SiC 21A 120mOhm TrenchMOS
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92På lager
450Förväntad 2026-05-20
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SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC-MOSFET:ar N-Ch 1200V SiC 17A 160mOhm TrenchMOS
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24På lager
1 350På beställningen
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SiC MOSFETS SiC Through Hole TO-247-3
ROHM Semiconductor SiC-schottkydioder SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen
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770På lager
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SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor SiC-schottkydioder SiC Schottky Barrier Diode, 650V, 12A, 2nd Gen
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830På lager
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SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor SiC-schottkydioder SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen
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11På lager
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SiC Schottky Diodes Through Hole TO-220ACG-2
ROHM Semiconductor SiC-MOSFET:ar RECT 1.2KV 40A RDL SIC SKY
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785På beställningen
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SiC MOSFETS SiC Through Hole TO-247N-3