1200V SIC MOSFETs

Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 20 mOhm TO-247-4 Notch
Datablad
115På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 24 mOhms - 10 V, 21 V 3 V 136 nC - 55 C + 175 C 416 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch
Datablad
65På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 81 A 33 mOhms - 10 V, 21 V 5 V 109 nC - 55 C + 175 C 357 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch
Datablad
115På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 40 mOhms - 10 V, 21 V 5 V 91 nC - 55 C + 175 C 310 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch
Datablad
115På lager
Min.: 1
Multipla: 1

Thorugh Hole TO-247-4 N-Channel 1 Channel 1.2 kV 54 A 53 mOhms - 10 V, 21 V 5 V 69 nC - 55 C + 175 C 256 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 45 mOhm TO-247-4 Notch
Datablad
120På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 49 A 60 mOhms - 10 V, 21 V 5 V 61 nC - 55 C + 175 C 237 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 60 mOhm TO-247-4 Notch
Datablad
117På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 80 mOhms - 10 V, 21 V 5 V 45 nC - 55 C + 175 C 192 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 80 mOhm TO-247-4 Notch
Datablad
81På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 30 A 107 mOhms - 10 V, + 21 V 5 V 34 nC - 55 C + 175 C 161 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 31 mOhm TO-247-4 Notch
Datablad
Ej på lager
Min.: 60
Multipla: 60

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 72 A 42 mOhms - 10 V, 21 V 5 V 70 nC - 55 C + 175 C 326 W Enhancement