Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
APC-E SiC-MOSFET:ar 650V 50mR, TO-247-4L, Industrial Grade
Datablad
288På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC-MOSFET:ar 1200V 75mR, TO-247-4L, Automotive Grade
Datablad
300På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC-MOSFET:ar 1200V 75mR, TO-247-4L, Industrial Grade
Datablad
300På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC-MOSFET:ar 650V 50mR, TO-247-4L, Automotive Grade
Datablad
300På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC-MOSFET:ar 650V 27mR, TO-247-4L, Automotive Grade
Datablad
300På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC-MOSFET:ar 1200V 30mR, TO-247-4L, Automotive Grade
Datablad
300På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 57 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E SiC-MOSFET:ar 1200V 13mR, TO247-4L, Industrial Grade
Datablad
300På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 160 A 16 mOhms - 10 V, 25 V 3.6 V 213 nC - 55 C + 175 C 750 W Enhancement
APC-E SiC-MOSFET:ar 1200V 13mR, TO247-4L, Automotive Grade
Datablad
300På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 1.2 kV 145 A 13 mOhms 18 V + 175 C
APC-E SiC-MOSFET:ar 650V 27mR, SAPKG-9L, Automotive Grade
Datablad
600Förväntad 2026-08-28
Min.: 1
Multipla: 1
Papprulle: 600

SMD/SMT SAPKG-9L N-Channel 1 Channel 650 V 81 A 35 mOhms - 10 V, 25 V 4.2 V 87 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC-MOSFET:ar 650V 35mR, TO-247-4L, Automotive Grade
300Förväntad 2026-04-03
Min.: 1
Multipla: 1

Through Hole TO-247-4L 650 V
APC-E SiC-MOSFET:ar 1200V 20mR, TO-247-4L, Industrial Grade
Datablad
300Förväntad 2026-04-03
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 88 A 26 mOhms - 10 V, 25 V 4.2 V 154 nC - 55 C + 175 C 403 W Enhancement
APC-E SiC-MOSFET:ar 650V 27mR, TO-247-4L, Industrial Grade
Datablad
300Förväntad 2026-03-27
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC-MOSFET:ar 1200V 30mR, TO-247-4L, Industrial Grade
Datablad
300Förväntad 2026-03-27
Min.: 1
Multipla: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 58 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement

APC-E SiC-MOSFET:ar 650V 65mR, TO-247-3L, Automotive Grade
300Förväntad 2026-05-01
Min.: 1
Multipla: 1

Through Hole TO-247-3L 650 V
APC-E SiC-MOSFET:ar 650V 35mR, TO-247-4L, Industrial Grade
300Förväntad 2026-04-03
Min.: 1
Multipla: 1

Through Hole TO-247-4L 650 V

APC-E SiC-MOSFET:ar 650V 65mR, TO-247-3L, Industrial Grade
300Förväntad 2026-05-01
Min.: 1
Multipla: 1

Through Hole TO-247-3L 650 V
APC-E SiC-MOSFET:ar 1700V 1000mR, TO247-3L, Industrial Grade
Datablad
300Förväntad 2026-03-27
Min.: 1
Multipla: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
APC-E SiC-MOSFET:ar 1200V 75mR, TO247-4L, Automotive Grade
Datablad
Ledtid för icke lagerfört 15 Veckor
Min.: 1
Multipla: 1

Through Hole TO-247-4 1.2 kV 41 A 75 mOhms 15 V + 175 C
APC-E SiC-MOSFET:ar 1200V 32mR, TO247-4L, Industrial Grade
Datablad
Ledtid för icke lagerfört 15 Veckor
Min.: 1
Multipla: 1

Through Hole TO-247-4 1.2 kV 77 A 32 mOhms 15 V + 175 C
APC-E SiC-MOSFET:ar 1200V 75mR, TO247-4L, Industrial Grade
Datablad
Ledtid för icke lagerfört 15 Veckor
Min.: 1
Multipla: 1

Through Hole TO-247-4 1.2 kV 35 A 75 mOhms 15 V + 175 C