DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BVDSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
Datablad
50På lager
Min.: 1
Multipla: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
50På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement
Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
24På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datablad
17På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 3.6 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
39På lager
Min.: 1
Multipla: 1

Through Hole To-247-3 N-Channel 1 Channel 1.2 kV 72.7 A 43 mOhms - 8 V, + 19 V 2.5 V 105 nC - 55 C + 175 C 341 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
90På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 170 C 246 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datablad
60På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 175 C 246 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datablad
92På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datablad
20På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 2.5 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated SiC-MOSFET:ar SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datablad
60På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement