Discrete 600V XPT IGBTs

IXYS Discrete 600V XPT Insulated-Gate Bipolar Transistors (IGBTs) are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values.

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Antal RoHS ECAD-modell Teknologi
Paket/låda
Monteringsstil
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Maximal grind-emitterspänning
Kontinuerlig kollektorström vid 25 C
Pd - Effektavledning
Minsta drifttemperatur
Maximal drifttemperatur
Serie
Förpackning
IXYS IGBTs XPT IGBT C3-Class 600V/170Amp CoPacked
Datablad
154På lager
Min.: 1
Multipla: 1

Si TO-264 Through Hole Single 600 V 2.2 V - 20 V, 20 V 170 A 695 W - 55 C + 150 C IXXK100N60 Tube
IXYS IGBTs XPT IGBT B3-Class 600V/210Amp
Datablad
259På lager
Min.: 1
Multipla: 1

Si TO-247AD Through Hole Single 600 V 1.8 V - 20 V, 20 V 220 A 830 W - 55 C + 150 C IXXH100N60 Tube
IXYS IGBTs XPT IGBT C3-Class 600V/100Amp CoPacked
Datablad
1 555På lager
Min.: 1
Multipla: 1

Si TO-247AD Through Hole Single 600 V 2.3 V - 20 V, 20 V 100 A 600 W - 55 C + 150 C IXXH50N60 Tube
IXYS IGBTs XPT IGBT C3-Class 600V/190Amp
Datablad
1På lager
Min.: 1
Multipla: 1

Si TO-247AD Through Hole Single 600 V 2.2 V - 20 V, 20 V 190 A 830 W - 55 C + 150 C IXXH100N60 Tube
IXYS IGBTs XPT IGBT B3-Class 600V/190Amp CoPacked
Datablad
300Tillgänglig mängd i lager
Mer info finns
Min.: 300
Multipla: 25

Si TO-264-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 190 A 695 W - 55 C + 150 C IXXK100N60 Tube
IXYS IGBTs XPT IGBT C3-Class 600V/100 Amp
Datablad
Ledtid för icke lagerfört 27 Veckor
Min.: 300
Multipla: 30

Si TO-247AD Through Hole 600 V 2.3 V - 20 V, 20 V 100 A 600 W - 55 C + 150 C IXXH50N60 Tube