STGP10M65DF2

STMicroelectronics
511-STGP10M65DF2
STGP10M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss

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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
STGP10M65DF2
Tube
Brand: STMicroelectronics
Product Type: IGBTs
Factory Pack Quantity: 2000
Subcategory: Transistors
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

In Stock: 1 000

Stock:
1 000
Can Dispatch Immediately
On Order:
2 000
Expected 2027-01-29
Factory Lead Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr
Ext. Price:
-,-- kr
Est. Tariff:

Pricing (SEK)

Qty. Unit Price
Ext. Price
20,36 kr 20,36 kr
12,94 kr 129,40 kr
8,71 kr 871,00 kr
6,89 kr 3 445,00 kr
6,26 kr 6 260,00 kr
5,82 kr 11 640,00 kr
5,36 kr 21 440,00 kr