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IXYP60N65A5

Name: IXYS IXYP60N65A5
Brand: IXYS
SKU: 747-IXYP60N65A5
Price: 53.19 SEK
Availability: InStock

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Mouser nr:

747-IXYP60N65A5

Tillverk: Nr.:

IXYP60N65A5

Tillverk:

IXYS

Beskrivning:

IGBTs XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220

Datablad:

IXYP60N65A5 Datablad (PDF)

ECAD-modell:

Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

Mer information

Lär dig mer om IXYS IXYP60N65A5

På lager: 265

Lager:: 265 Kan skickas omedelbart

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Fabrikens ledtid:: 28 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.

Ange kvantitet:

Minst: 1 Flera: 1

Enhetspris:

-,-- kr

Ext. pris:

-,-- kr

Est. Pris:

Prissättning (SEK)

Antal	Enhetspris	Ext. pris
	53,19 kr	53,19 kr
	30,30 kr	303,00 kr
	30,19 kr	3.019,00 kr
	25,62 kr	12.810,00 kr

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Produktattribut	Attributvärde	Välj attribut
Tillverkare:	IXYS
Produktkategori:	IGBTs
RoHS-direktivet:
Teknologi:	Si
Paket/låda:	TO-220-3
Monteringsstil:	Through Hole
Konfiguration:	Single
Kollektor- Emitterspänning VCEO Max.:	650 V
Kollektor - Sändarens mättnadsspänning:	1.35 V
Maximal grind-emitterspänning:	- 20 V, 20 V
Kontinuerlig kollektorström vid 25 C:	134 A
Pd - Effektavledning:	395 W
Minsta drifttemperatur:	- 55 C
Maximal drifttemperatur:	+ 175 C
Förpackning:	Tube
Märke:	IXYS
Kontinuerlig kollektorström IC max.:	60 A
Gate-sändarens läckström:	100 nA
Produkttyp:	IGBT Transistors
Fabriksförpackningskvantitet:	50
Underkategori:	IGBTs
Handelsnamn:	XPT

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Datablad

IXYP60N65A5 Datablad (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

650V XPT™ High Speed Trench IGBTs

IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of +110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions - a 10μs Short Circuit Safe Operating Area (SCSOA).

XPT™ GenX5™ Trench IGBTs

IXYS XPT™ GenX5™ Trench IGBTs are developed using proprietary XPT thin-wafer technology and state-of-the-art 5th generation (GenX5) Trench IGBT process. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The XPT GenX5 Trench IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and a 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. These IGBTs also include a positive collector-to-emitter voltage temperature coefficient, enabling designers to use multiple devices in parallel to meet high current requirements. The low gate charge of these devices helps reduce gate drive requirements and switching losses.

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DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.