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IXXX160N65B4

Name: IXYS IXXX160N65B4
Brand: IXYS
SKU: 747-IXXX160N65B4
Price: 216.15 SEK
Availability: InStock

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Mouser nr:

747-IXXX160N65B4

Tillverk: Nr.:

IXXX160N65B4

Tillverk:

IXYS

Beskrivning:

IGBTs 650V/310A TRENCH IGBT GENX4 XPT

Datablad:

IXXX160N65B4 Datablad

ECAD-modell:

Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

Mer information

Lär dig mer om IXYS IXXX160N65B4

På lager: 214

Lager:: 214 Kan skickas omedelbart

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Fabrikens ledtid:: 27 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.

Ange kvantitet:

Minst: 1 Flera: 1

Enhetspris:

-,-- kr

Ext. pris:

-,-- kr

Est. Pris:

Prissättning (SEK)

Antal	Enhetspris	Ext. pris
	216,15 kr	216,15 kr
	181,38 kr	1.813,80 kr

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Produktattribut	Attributvärde	Välj attribut
Tillverkare:	IXYS
Produktkategori:	IGBTs
RoHS-direktivet:
REACH - SVHC:
Teknologi:	Si
Paket/låda:	TO-247-3
Monteringsstil:	Through Hole
Konfiguration:	Single
Kollektor- Emitterspänning VCEO Max.:	650 V
Kollektor - Sändarens mättnadsspänning:	1.8 V
Maximal grind-emitterspänning:	- 20 V, 20 V
Kontinuerlig kollektorström vid 25 C:	310 A
Pd - Effektavledning:	940 W
Minsta drifttemperatur:	- 55 C
Maximal drifttemperatur:	+ 175 C
Serie:	Trench
Förpackning:	Tube
Märke:	IXYS
Kontinuerlig kollektorström IC max.:	160 A
Gate-sändarens läckström:	200 nA
Produkttyp:	IGBT Transistors
Fabriksförpackningskvantitet:	30
Underkategori:	IGBTs
Handelsnamn:	XPT
Enhetens vikt:	6,500 g

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Datablad

IXXX160N65B4 Datablad

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

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Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low V_SAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

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