IDW40G65C5BXKSA2

Infineon Technologies
726-IDW40G65C5BXKSA2
IDW40G65C5BXKSA2

Tillverk:

Beskrivning:
SiC-schottkydioder SIC DIODES

ECAD-modell:
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På lager: 187

Lager:
187 Kan skickas omedelbart
Fabrikens ledtid:
17 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
128,51 kr 128,51 kr
91,78 kr 917,80 kr
78,70 kr 7.870,00 kr
66,05 kr 31.704,00 kr

Produktattribut Attributvärde Välj attribut
Infineon
Produktkategori: SiC-schottkydioder
RoHS-direktivet:  
Through Hole
TO-247-3
Single
40 A
650 V
1.5 V
182 A
2.2 uA
- 55 C
+ 175 C
XDW40G65
Tube
Märke: Infineon Technologies
Pd - Effektavledning: 183 W
Produkttyp: SiC Schottky Diodes
Fabriksförpackningskvantitet: 240
Underkategori: Diodes & Rectifiers
Handelsnamn: CoolSiC
Vr - Backspänning: 650 V
Del # Alias: IDW40G65C5B SP001633192
Enhetens vikt: 6 g
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TARIC:
8541100000
CNHTS:
8541590000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100199
BRHTS:
85411099
ECCN:
EAR99

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.