IDH16G65C5XKSA2

Infineon Technologies
726-IDH16G65C5XKSA2
IDH16G65C5XKSA2

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Beskrivning:
SiC-schottkydioder SIC DIODES

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På lager: 2 334

Lager:
2 334 Kan skickas omedelbart
Fabrikens ledtid:
11 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
51,01 kr 51,01 kr
23,11 kr 231,10 kr
22,78 kr 2.278,00 kr
22,67 kr 11.335,00 kr

Produktattribut Attributvärde Välj attribut
Infineon
Produktkategori: SiC-schottkydioder
RoHS-direktivet:  
Through Hole
TO-220-2
Single
16 A
650 V
1.5 V
124 A
850 nA
- 55 C
+ 175 C
XDH16G65
Tube
Märke: Infineon Technologies
Pd - Effektavledning: 129 W
Produkttyp: SiC Schottky Diodes
Fabriksförpackningskvantitet: 500
Underkategori: Diodes & Rectifiers
Handelsnamn: CoolSiC
Vr - Backspänning: 650 V
Del # Alias: IDH16G65C5 SP001632392
Enhetens vikt: 2 g
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TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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