IDH08G65C5XKSA2

Infineon Technologies
726-IDH08G65C5XKSA2
IDH08G65C5XKSA2

Tillverk:

Beskrivning:
SiC-schottkydioder SIC DIODES

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Lär dig mer om Infineon Technologies IDH08G65C5XKSA2

På lager: 540

Lager:
540 Kan skickas omedelbart
Fabrikens ledtid:
14 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
35,21 kr 35,21 kr
22,89 kr 228,90 kr
17,88 kr 1.788,00 kr
15,04 kr 7.520,00 kr
12,86 kr 12.860,00 kr
12,21 kr 30.525,00 kr

Produktattribut Attributvärde Välj attribut
Infineon
Produktkategori: SiC-schottkydioder
RoHS-direktivet:  
Through Hole
TO-220-2
Single
8 A
650 V
1.5 V
68 A
400 nA
- 55 C
+ 175 C
XDH08G65
Tube
Märke: Infineon Technologies
Pd - Effektavledning: 76 W
Produkttyp: SiC Schottky Diodes
Fabriksförpackningskvantitet: 500
Underkategori: Diodes & Rectifiers
Handelsnamn: CoolSiC
Vr - Backspänning: 650 V
Del # Alias: IDH08G65C5 SP001632368
Enhetens vikt: 2 g
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Attribut som valts: 0

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TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

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