FFSP1265A

onsemi
863-FFSP1265A
FFSP1265A

Tillverk:

Beskrivning:
SiC-schottkydioder 650V 12A SIC SBD

Datablad:
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Mer information
Lär dig mer om onsemi FFSP1265A

Produktattribut Attributvärde Välj attribut
onsemi
Produktkategori: SiC-schottkydioder
RoHS-direktivet:  
Through Hole
TO-220-2
Single
12 A
650 V
1.5 V
70 A
200 uA
- 55 C
+ 175 C
650 V
FFSP1265A
Tube
Märke: onsemi
Pd - Effektavledning: 115 W
Produkttyp: SiC Schottky Diodes
Fabriksförpackningskvantitet: 50
Underkategori: Diodes & Rectifiers
Handelsnamn: EliteSiC
Enhetens vikt: 2 g
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Attribut som valts: 0

Efterlevnadskoder
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
MXHTS:
8541100101
ECCN:
EAR99
Ursprungsklassificeringar
Ursprungsland:
Kina
Monteringsland:
Kina
Distributionsland:
Korea
Landet kan komma att ändras vid leveranstillfället.

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

På lager: 802

Lager:
802 Kan skickas omedelbart
Fabrikens ledtid:
19 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
40,99 kr 40,99 kr
27,26 kr 272,60 kr
23,41 kr 2 341,00 kr
21,32 kr 10 660,00 kr

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