NCD57090CDWR2G

onsemi
863-NCD57090CDWR2G
NCD57090CDWR2G

Tillverk:

Beskrivning:
Styrdrivenheter Isolated High Current Gate Driver Isolated High Current Gate Driver

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 19 089

Lager:
19 089 Kan skickas omedelbart
Fabrikens ledtid:
25 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
25,83 kr 25,83 kr
19,51 kr 195,10 kr
17,22 kr 430,50 kr
14,50 kr 1.450,00 kr
14,39 kr 3.597,50 kr
14,17 kr 7.085,00 kr
Komplett Papprulle (beställ i multiplar av 1000)
13,52 kr 13.520,00 kr
13,41 kr 26.820,00 kr

Produktattribut Attributvärde Välj attribut
onsemi
Produktkategori: Styrdrivenheter
RoHS-direktivet:  
IGBT, MOSFET Gate Drivers
SMD/SMT
SOIC-8
1 Driver
1 Output
6.5 A
20 V
20 V
Non-Inverting
13 ns
13 ns
- 40 C
+ 125 C
NCD57090
Reel
Cut Tape
Märke: onsemi
Produkttyp: Gate Drivers
Fabriksförpackningskvantitet: 1000
Underkategori: PMIC - Power Management ICs
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Attribut som valts: 0

CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

NCD57090 & NCV57090 IGBT/MOSFET Gate Drivers

onsemi NCD57090 and NCV57090 IGBT/MOSFET Gate Drivers are high-current, single-channel gate drivers for IGBTs and MOSFETs, with 5kVrms internal galvanic isolation. The NCD57090 and NCV57090 provide high system efficiency and reliability in high-power applications. These devices accept complimentary inputs and, depending on the pin configuration, offer options such as Active Miller Clamp, negative power supply, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. The NCD57090 and NCV57090 accommodate a wide range of input bias voltage and signal levels from 3.3V to 20.0V.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.