Det verkar som att du har inaktiverat Javascript i din webbläsare. Vissa funktioner på den här sidan kommer inte att fungera, såvida du inte har loggat in.

Ser du något fel?

FFSP08120A

Name: onsemi FFSP08120A
Brand: onsemi
SKU: 512-FFSP08120A
Price: 67.25 SEK
Availability: InStock

Bilder är endast för referens
Se produktspecifikationer

Mouser nr:

512-FFSP08120A

Tillverk: Nr.:

FFSP08120A

Tillverk:

onsemi

Beskrivning:

SiC-schottkydioder 1200V SiC SBD 8A

Datablad:

FFSP08120A Datablad (PDF)

ECAD-modell:

Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

Mer information

Lär dig mer om onsemi FFSP08120A

På lager: 760

Lager:: 760 Kan skickas omedelbart

Ett oväntat fel har inträffat. Försök igen senare.
Fabrikens ledtid:: 12 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.

Ange kvantitet:

Minst: 1 Flera: 1

Enhetspris:

-,-- kr

Ext. pris:

-,-- kr

Est. Pris:

Prissättning (SEK)

Antal	Enhetspris	Ext. pris
	67,25 kr	67,25 kr
	36,08 kr	360,80 kr
	33,03 kr	3.303,00 kr
	30,96 kr	15.480,00 kr

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Produktattribut	Attributvärde	Välj attribut
Tillverkare:	onsemi
Produktkategori:	SiC-schottkydioder
RoHS-direktivet:
Monteringsstil:	Through Hole
Paket/låda:	TO-220-2
Konfiguration:	Single
If - Framström:	8 A
Vrrm - Repetativ backspänning:	1.2 kV
Vf - Framspänning:	1.45 V
Ifsm - Stötström framåt:	68 A
Ir - Motström:	200 uA
Minsta drifttemperatur:	- 55 C
Maximal drifttemperatur:	+ 175 C
Serie:	FFSP08120A
Förpackning:	Tube
Märke:	onsemi
Pd - Effektavledning:	166 W
Produkttyp:	SiC Schottky Diodes
Fabriksförpackningskvantitet:	50
Underkategori:	Diodes & Rectifiers
Handelsnamn:	EliteSiC
Vr - Backspänning:	1.2 kV
Enhetens vikt:	2,160 g

Hittade produkter:

Markera minst en kryssruta för att visa liknande produkter

Markera minst en kryssruta ovan för att visa liknande produkter i denna kategori.

Attribut som valts: 0

Filtrera dokument:

Datablad

FFSP08120A Datablad (PDF)

PCN

TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100101
ECCN:: EAR99

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

1200V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 1200V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.