TK100A10N1,S4X
Se produktspecifikationer
Tillverk:
Beskrivning:
MOSFET:er MOSFET NCh 3.1ohm VGS10V10uAVDS100V
På lager: 141
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Lager:
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141 Kan skickas omedelbartEtt oväntat fel har inträffat. Försök igen senare.
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Fabrikens ledtid:
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20 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Prissättning (SEK)
| Antal | Enhetspris |
Ext. pris
|
|---|---|---|
| 52,54 kr | 52,54 kr | |
| 27,80 kr | 278,00 kr | |
| 25,83 kr | 2.583,00 kr | |
| 21,69 kr | 10.845,00 kr |
Datablad
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- TARIC:
- 8541290000
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- MXHTS:
- 85412999
- ECCN:
- EAR99
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