STP20N95K5

STMicroelectronics
511-STP20N95K5
STP20N95K5

Tillverk:

Beskrivning:
MOSFET:er N-Ch 950V 0.275 Ohm 17.5A MDmesh K5

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 3 284

Lager:
3 284 Kan skickas omedelbart
Fabrikens ledtid:
14 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
66,60 kr 66,60 kr
49,27 kr 492,70 kr
39,89 kr 3.989,00 kr
35,43 kr 17.715,00 kr
30,30 kr 30.300,00 kr

Produktattribut Attributvärde Välj attribut
STMicroelectronics
Produktkategori: MOSFET:er
RoHS-direktivet:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
950 V
17.5 A
330 mOhms
- 30 V, 30 V
3 V
48 nC
- 55 C
+ 150 C
250 W
Enhancement
MDmesh
Tube
Märke: STMicroelectronics
Konfiguration: Single
Produkttyp: MOSFETs
Serie: STP20N95K5
Fabriksförpackningskvantitet: 1000
Underkategori: Transistors
Transistortyp: 1 N-Channel
Enhetens vikt: 2 g
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Attribut som valts: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.