STGWA40IH65DF

STMicroelectronics
511-STGWA40IH65DF
STGWA40IH65DF

Tillverk:

Beskrivning:
IGBTs Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 lo

ECAD-modell:
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Tillgänglighet

Lager:
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Fabrikens ledtid:
14 Veckor Uppskattad tillverkningstid i fabriken.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
39,46 kr 39,46 kr
21,80 kr 218,00 kr
17,88 kr 1.788,00 kr
15,70 kr 9.420,00 kr

Produktattribut Attributvärde Välj attribut
STMicroelectronics
Produktkategori: IGBTs
RoHS-direktivet:  
Si
TO-247-3
Through Hole
Single
650 V
1.5 V
- 20 V, 20 V
80 A
238 W
- 55 C
+ 175 C
STGWA40IH65DF
Tube
Märke: STMicroelectronics
Kontinuerlig kollektorström IC max.: 80 A
Monteringsland: Not Available
Distributionsland: Not Available
Ursprungsland: CN
Gate-sändarens läckström: 250 nA
Produkttyp: IGBT Transistors
Fabriksförpackningskvantitet: 600
Underkategori: IGBTs
Enhetens vikt: 6,100 g
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Attribut som valts: 0

TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower VCE(sat)  combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.