STFW38N65M5

STMicroelectronics
511-STFW38N65M5
STFW38N65M5

Tillverk:

Beskrivning:
MOSFET:er N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package
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På lager: 137

Lager:
137 Kan skickas omedelbart
Fabrikens ledtid:
14 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
59,51 kr 59,51 kr
45,56 kr 455,60 kr
36,84 kr 3.684,00 kr
32,70 kr 19.620,00 kr
28,01 kr 33.612,00 kr

Produktattribut Attributvärde Välj attribut
STMicroelectronics
Produktkategori: MOSFET:er
RoHS-direktivet:  
Si
Through Hole
TO-3PF-3
N-Channel
1 Channel
650 V
30 A
95 mOhms
- 25 V, 25 V
4 V
71 nC
- 55 C
+ 150 C
57 W
Enhancement
MDmesh
Tube
Märke: STMicroelectronics
Konfiguration: Single
Falltid: 9 ns
Produkttyp: MOSFETs
Stigtid: 9 ns
Serie: Mdmesh M5
Fabriksförpackningskvantitet: 300
Underkategori: Transistors
Transistortyp: 1 N-Channel
Enhetens vikt: 7 g
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Attribut som valts: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. 

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

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