IPB90N04S4-02

Infineon Technologies
726-IPB90N04S4-02
IPB90N04S4-02

Tillverk:

Beskrivning:
MOSFET:er N-Ch 40V 90A D2PAK-2 OptiMOS-T2

Datablad:
ECAD-modell:
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Mer information
Lär dig mer om Infineon Technologies IPB90N04S4-02

På lager: 971

Lager:
971 Kan skickas omedelbart
Fabrikens ledtid:
9 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:
Förpackning:
Komplett Papprulle (beställ i multiplar av 1000)

Prissättning (SEK)

Antal Enhetspris
Ext. pris
Skärtejp/MouseReel™ †
28,78 kr 28,78 kr
18,75 kr 187,50 kr
12,97 kr 1.297,00 kr
10,88 kr 5.440,00 kr
Komplett Papprulle (beställ i multiplar av 1000)
9,37 kr 9.370,00 kr
9,21 kr 18.420,00 kr
† 58,00 kr MouseReel™-avgiften kommer att läggas till och beräknas i din kundvagn. MouseReel™-beställningar kan inte avbeställas eller returneras. ↩

Produktattribut Attributvärde Välj attribut
Infineon
Produktkategori: MOSFET:er
RoHS-direktivet:  
REACH - SVHC:
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
40 V
90 A
2.1 mOhms
- 20 V, 20 V
3 V
91 nC
- 55 C
+ 175 C
150 W
Enhancement
AEC-Q100
OptiMOS
Reel
Cut Tape
MouseReel
Märke: Infineon Technologies
Konfiguration: Single
Falltid: 26 ns
Produkttyp: MOSFETs
Stigtid: 13 ns
Serie: OptiMOS-T2
Fabriksförpackningskvantitet: 1000
Underkategori: Transistors
Transistortyp: 1 N-Channel
Typisk fördröjningstid vid avstängning: 27 ns
Typisk fördröjningstid vid påslagning: 23 ns
Del # Alias: IPB9N4S42XT SP000646182 IPB90N04S402ATMA1
Enhetens vikt: 4 g
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Attribut som valts: 0

Datablad

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Automotive COOLiRFET™ Power MOSFETs

Infineon Automotive COOLiRFET™ Power MOSFETs are specifically designed for Automotive applications. These HEXFET® Power MOSFETs utilize processing techniques that achieve low ON-resistance per silicon area. Additional features of this design are a +175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These devices offer low conduction losses and robust avalanche performance to deliver higher efficiency, power density, and reliability. With this performance, many applications using these COOLiRFET™ devices run significantly cooler than with state-of-the-art MOSFETs. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

20V to 40V N-Channel Automotive MOSFETs

Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.

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