2EDL05I06PJ

Infineon Technologies
726-2EDL05I06PJ
2EDL05I06PJ

Tillverk:

Beskrivning:
Styrdrivenheter 600V half-bridge 0.7A,integrated BSD

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 411

Lager:
411 Kan skickas omedelbart
Fabrikens ledtid:
24 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
24,53 kr 24,53 kr
15,81 kr 158,10 kr
14,17 kr 354,25 kr
11,77 kr 1.177,00 kr
11,01 kr 2.752,50 kr
9,66 kr 4.830,00 kr
8,35 kr 8.350,00 kr
Komplett Papprulle (beställ i multiplar av 2500)
7,60 kr 19.000,00 kr
7,24 kr 54.300,00 kr

Produktattribut Attributvärde Välj attribut
Infineon
Produktkategori: Styrdrivenheter
RoHS-direktivet:  
IGBT, MOSFET Gate Drivers
Half-Bridge
SMD/SMT
SOIC-14
1 Driver
1 Output
500 mA
10 V
20 V
48 ns
24 ns
- 40 C
+ 105 C
Infineon SOI
Reel
Cut Tape
Märke: Infineon Technologies
Logiktyp: CMOS, LSTTL
Maximal förseningstid vid avstängning: 590 ns
Maximal förseningstid vid påslagning: 610 ns
Fuktkänsliga: Yes
Pd - Effektavledning: 850 mW
Produkttyp: Gate Drivers
Utbredningsförsening - Max: 610 ns
Avstängning: Shutdown
Fabriksförpackningskvantitet: 2500
Underkategori: PMIC - Power Management ICs
Teknologi: Si
Handelsnamn: EiceDRIVER
Del # Alias: SP001114156 2EDL05I06PJXUMA1
Enhetens vikt: 138,260 mg
Hittade produkter:
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Attribut som valts: 0

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CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99

Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

Small Home Appliance Solutions

Infineon Small Home Appliance Solutions features a portfolio of products that fit into small home appliance applications. There is a growing trend for style and more efficiency, which designers are addressing with countless variations. Energy-efficient, modern-looking, wipe-clean, and hermetically sealed surfaces are only a few characteristics that a design engineer has to consider and incorporate into new designs. Infineon delivers solutions for several key areas, such as induction heating, as well as appliances that require motor control solutions with energy-efficient, integrated power devices.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

Half-Bridge Gate Driver ICs

Infineon Technologies Half-Bridge Gate Driver ICs are based on level-shifter Silicon On Insulator (SOI) technology. This technology integrates a low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.