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MMIX1T600N04T2

Name: IXYS MMIX1T600N04T2
Brand: IXYS
SKU: 747-MMIX1T600N04T2
Price: 296.59 SEK
Availability: OutOfStock

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Se produktspecifikationer

Mouser nr:

747-MMIX1T600N04T2

Tillverk: Nr.:

MMIX1T600N04T2

Tillverk:

IXYS

Beskrivning:

MOSFET:er 40V 600A

Datablad:

MMIX1T600N04T2 Datablad

ECAD-modell:

Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

Mer information

Lär dig mer om IXYS MMIX1T600N04T2

Tillgänglighet

Lager:: Ej på lager

Ett oväntat fel har inträffat. Försök igen senare.
Fabrikens ledtid:: 25 Veckor Uppskattad tillverkningstid i fabriken.

Ange kvantitet:

Minst: 300 Flera: 20

Enhetspris:

-,-- kr

Ext. pris:

-,-- kr

Est. Pris:

Denna produkt levereras UTAN KOSTNAD

Prissättning (SEK)

Antal	Enhetspris	Ext. pris
	296,59 kr	88 977,00 kr

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Produktattribut	Attributvärde	Välj attribut
Tillverkare:	IXYS
Produktkategori:	MOSFET:er
RoHS-direktivet:
REACH - SVHC:
Teknologi:	Si
Monteringsstil:	SMD/SMT
Paket/låda:	SMPD-24
Transistorns polaritet:	N-Channel
Antal kanaler:	1 Channel
Vds - Dräneringskällans genombrottsspänning:	40 V
Id - Kontinuerlig dräneringsström:	600 A
Rds på - Dräneringskällans resistans:	1.3 mOhms
Vgs - Gate-källans spänning:	- 20 V, 20 V
Vgs th - Gate-källans tröskelspänning:	1.5 V
Qg - Gate-laddning:	590 nC
Minsta drifttemperatur:	- 55 C
Maximal drifttemperatur:	+ 175 C
Pd - Effektavledning:	830 W
Kanalläge:	Enhancement
Handelsnamn:	HiPerFET
Förpackning:	Tube
Märke:	IXYS
Konfiguration:	Single
Produkttyp:	MOSFETs
Serie:	MMIX1T600N04
Fabriksförpackningskvantitet:	20
Underkategori:	Transistors
Enhetens vikt:	8 g

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Datablad

MMIX1T600N04T2 Datablad

PCN

Product Change Notification (PDF)

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Efterlevnadskoder

TARIC:: 8541900000
CNHTS:: 8541290000
CAHTS:: 8541900000
USHTS:: 8541290065
JPHTS:: 8542900006
MXHTS:: 8541900299
ECCN:: EAR99

Ursprungsklassificeringar

Ursprungsland:: Filippinerna
Monteringsland:: Ej tillgänglig
Distributionsland:: Ej tillgänglig

Landet kan komma att ändras vid leveranstillfället.

Surface Mount Power Device (SMPD)

IXYS Surface Mount Power Devices (SMPD) provide an innovative solution that allows for many design optimization opportunities across a large number of power electronics applications. Weighing only 8g, the SMPD Package is typically lighter by 50% than comparable conventional power modules, thereby enabling lower weight power systems. Due to their internal insulation by DCB, it is possible to use the same heat sink for multiple devices, reducing thermal management efforts. An added benefit of being smaller and lighter is that it provides higher robustness against vibrations and g-forces, especially if used in portable appliances, increasing the life expectancy and reliability of these devices.

HiPerFET and MOSFET Power Devices

IXYS HiPerFET and MOSFET Power Devices are available in the SMPD package, which is much lighter (typically by 50%) than comparable conventional power modules. This enables the designer to create lower-weight power systems. Due to its compact and ultra-low profile package, it is possible to use the same heat sink for multiple devices, which saves PCB space. An added benefit of being smaller and lighter is that it provides better protection against vibrations and g-forces, especially if used in portable appliances. This benefit also increases the life expectancy and reliability of the devices.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.