IXTY8N70X2

IXYS
747-IXTY8N70X2
IXTY8N70X2

Tillverk:

Beskrivning:
MOSFET:er 700V/8A Ultra Junct X2-Class MOSFET

Datablad:
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Mer information
Lär dig mer om IXYS IXTY8N70X2

På lager: 60

Lager:
60 Kan skickas omedelbart
Fabrikens ledtid:
41 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
50,46 kr 50,46 kr
32,97 kr 329,70 kr
24,49 kr 1 714,30 kr
19,19 kr 10 746,40 kr
18,87 kr 19 813,50 kr

Produktattribut Attributvärde Välj attribut
IXYS
Produktkategori: MOSFET:er
RoHS-direktivet:  
Si
SMD/SMT
TO-252-3
N-Channel
1 Channel
700 V
8 A
500 mOhms
- 30 V, 30 V
3 V
12 nC
- 55 C
+ 150 C
150 W
Enhancement
HiPerFET
Tube
Märke: IXYS
Konfiguration: Single
Monteringsland: Not Available
Distributionsland: Not Available
Ursprungsland: KR
Falltid: 24 ns
Transkonduktans framåt - Min: 4.8 S
Produkttyp: MOSFETs
Stigtid: 28 ns
Serie: X2-Class
Fabriksförpackningskvantitet: 70
Underkategori: Transistors
Transistortyp: 1 N-Channel
Typisk fördröjningstid vid avstängning: 53 ns
Typisk fördröjningstid vid påslagning: 24 ns
Enhetens vikt: 330 mg
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Attribut som valts: 0

Datablad

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

AC/DC Power Supply

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Smart Metering Solutions

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Electrical Vehicle DC Fast Chargers

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Off-Highway Electric Vehicle Solutions

Littelfuse provides a wide range of solutions for off-highway electric vehicles. These electric vehicles share a similar architecture and have a power range from 48V to 400V. Off-highway electric vehicles include electric forklifts, golf carts, three-wheelers, tow tractors, compactors, and excavators.

HiPerFET™ Power MOSFETs

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X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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Ultra Junction MOSFETs

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