IXTP20N65XM

IXYS
747-IXTP20N65XM
IXTP20N65XM

Tillverk:

Beskrivning:
MOSFET:er 650V/9A Power MOSFET

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

Tillgänglighet

Lager:
Ej på lager
Minst: 300   Flera: 50
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:
Denna produkt levereras UTAN KOSTNAD

Prissättning (SEK)

Antal Enhetspris
Ext. pris
57,24 kr 17 172,00 kr
51,09 kr 25 545,00 kr
47,70 kr 47 700,00 kr

Produktattribut Attributvärde Välj attribut
IXYS
Produktkategori: MOSFET:er
RoHS-direktivet:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
9 A
210 mOhms
- 30 V, 30 V
3 V
35 nC
- 55 C
+ 150 C
63 W
Enhancement
HiPerFET
Tube
Märke: IXYS
Konfiguration: Single
Falltid: 22 ns
Transkonduktans framåt - Min: 9 S
Produkttyp: MOSFETs
Stigtid: 30 ns
Fabriksförpackningskvantitet: 50
Underkategori: Transistors
Typisk fördröjningstid vid avstängning: 46 ns
Typisk fördröjningstid vid påslagning: 18 ns
Enhetens vikt: 2 g
Hittade produkter:
Markera minst en kryssruta för att visa liknande produkter
Markera minst en kryssruta ovan för att visa liknande produkter i denna kategori.
Attribut som valts: 0

Denna funktion kräver att Javascript är aktiverat.

Efterlevnadskoder
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Ursprungsklassificeringar
Ursprungsland:
Korea
Monteringsland:
Ej tillgänglig
Distributionsland:
Ej tillgänglig
Landet kan komma att ändras vid leveranstillfället.

Off-Board Charger Sub-Unit Power Converters

Littelfuse Off-Board Charger Sub-Unit Power Converters are required for DC charging stations capable of charging to 80% SOC in under 30 minutes. These fast-charging applications require modular power converters, which can be paralleled to cater to different power levels, thereby enabling fast charging. The most critical parameters are energy density and system efficiency. A sub-unit power converter in a DC charging station consists of an AC/DC power stage and DC/DC power stage integrated into the charging station.

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

X-Class Power MOSFETs

IXYS X-Class Power MOSFETs are high-power density N-Channel Enhancement Mode MOSFETs. They are easy to mount and have a low RDS(ON) and QG with a low package inductance. Typical applications include switch-mode and resonant-mode power supplies, DC-DC converters and PFC circuits.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Off-Highway Electric Vehicle Solutions

Littelfuse provides a wide range of solutions for off-highway electric vehicles. These electric vehicles share a similar architecture and have a power range from 48V to 400V. Off-highway electric vehicles include electric forklifts, golf carts, three-wheelers, tow tractors, compactors, and excavators.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.