BIDW50N65T

Bourns
652-BIDW50N65T
BIDW50N65T

Tillverk:

Beskrivning:
IGBTs IGBT Discrete 650V, 50A in TO-247

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 2 233

Lager:
2 233 Kan skickas omedelbart
Fabrikens ledtid:
16 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
47,31 kr 47,31 kr
27,03 kr 270,30 kr

Produktattribut Attributvärde Välj attribut
Bourns
Produktkategori: IGBTs
RoHS-direktivet:  
Si
TO-247-3
Through Hole
Single
650 V
1.65 V
- 20 V, 20 V
100 A
416 W
- 55 C
+ 150 C
BID
Tube
Märke: Bourns
Kontinuerlig kollektorström IC max.: 100 A
Gate-sändarens läckström: 400 nA
Produkttyp: IGBT Transistors
Fabriksförpackningskvantitet: 600
Underkategori: IGBTs
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99

Electrification Solutions

Bourns Electrification Solutions feature a comprehensive range of transformers, chokes, diodes, resistors, fuses, transistors, and varistors. These products are designed for systems used in the process of electrification, which is the transition from traditional sources of energy, such as oil and gas, to cleaner and more sustainable forms of energy. Electrification affects how cars are refueled, homes are heated, and industries are powered, with the end goal being a reduction in air pollution and energy waste. One example is a heat pump, which is up to 3x more efficient than a boiler to save on heating bills.

Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.