IPW60R024CFD7XKSA1

Infineon Technologies
726-IPW60R024CFD7XKS
IPW60R024CFD7XKSA1

Tillverk:

Beskrivning:
MOSFET:er HIGH POWER_NEW

ECAD-modell:
Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

På lager: 178

Lager:
178
Kan skickas omedelbart
På beställningen:
240
Förväntad 2026-02-16
Fabrikens ledtid:
52
Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
125,57 kr 125,57 kr
75,43 kr 1.885,75 kr
65,62 kr 6.562,00 kr

Produktattribut Attributvärde Välj attribut
Infineon
Produktkategori: MOSFET:er
RoHS-direktivet:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
77 A
24 mOhms
- 20 V, 20 V
4 V
183 nC
- 55 C
+ 150 C
320 W
Enhancement
Tube
Märke: Infineon Technologies
Konfiguration: Single
Produkttyp: MOSFETs
Serie: IPW60R024CFD7
Fabriksförpackningskvantitet: 240
Underkategori: Transistors
Del # Alias: IPW60R024CFD7 SP002621050
Enhetens vikt: 6 g
Hittade produkter:
Markera minst en kryssruta för att visa liknande produkter
Markera minst en kryssruta ovan för att visa liknande produkter i denna kategori.
Attribut som valts: 0

Denna funktion kräver att Javascript är aktiverat.

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.