1EDI60I12AF

Infineon Technologies
726-1EDI60I12AF
1EDI60I12AF

Tillverk:

Beskrivning:
Styrdrivenheter 1200V Isolated 1-CH, 9.4A, SEP Output

Datablad:
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Mer information
Lär dig mer om Infineon Technologies 1EDI60I12AF

På lager: 3 451

Lager:
3 451 Kan skickas omedelbart
Fabrikens ledtid:
52 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.
Partier som är större än 3451 kommer att omfattas av ett krav på minimibeställning.
Minst: 1   Flera: 1
Enhetspris:
-,-- kr
Ext. pris:
-,-- kr
Est. Pris:

Prissättning (SEK)

Antal Enhetspris
Ext. pris
21,62 kr 21,62 kr
16,01 kr 160,10 kr
14,63 kr 365,75 kr
13,04 kr 1 304,00 kr
12,30 kr 3 075,00 kr
11,98 kr 5 990,00 kr
11,45 kr 11 450,00 kr
Komplett Papprulle (beställ i multiplar av 2500)
11,02 kr 27 550,00 kr
10,71 kr 53 550,00 kr

Alternativ förpackning

Tillverk: Artikelnummer:
1EDI60I12AFXUMA1
Emballage:
Reel, Cut Tape
Tillgänglighet:
På lager
Pris:
21,41 kr
Min:
1

Produktattribut Attributvärde Välj attribut
Infineon
Produktkategori: Styrdrivenheter
RoHS-direktivet:  
IGBT, MOSFET Gate Drivers
High-Side
SMD/SMT
DSO-8
1 Driver
1 Output
6 A
3.1 V
17 V
Inverting, Non-Inverting
10 ns
9 ns
- 40 C
+ 150 C
1ED Compact
Reel
Cut Tape
Märke: Infineon Technologies
Logiktyp: CMOS
Maximal förseningstid vid avstängning: 330 ns
Maximal förseningstid vid påslagning: 330 ns
Fuktkänsliga: Yes
Pd - Effektavledning: 400 mW
Produkttyp: Gate Drivers
Utbredningsförsening - Max: 330 ns
Avstängning: Shutdown
Fabriksförpackningskvantitet: 2500
Underkategori: PMIC - Power Management ICs
Teknologi: Si
Handelsnamn: EiceDRIVER
Del # Alias: SP001037208 1EDI60I12AFXUMA1
Enhetens vikt: 83 mg
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Attribut som valts: 0

Datablad

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Efterlevnadskoder
CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99
Ursprungsklassificeringar
Ursprungsland:
Kina
Monteringsland:
Kina
Distributionsland:
Tyskland
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EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

1-Channel EiceDRIVER™ MOSFET Gate Driver ICs

Infineon Technologies 1-Channel EiceDRIVER™ MOSFET Gate Driver ICs are the crucial link between control ICs, powerful MOSFET, and GaN switching devices. These gate driver ICs enable high system-level efficiencies, excellent power density, and consistent system robustness.

Isolated Gate Drivers

Infineon Isolated Gate Drivers use magnetically coupled coreless transformer (CT) technology to transfer signals across galvanic isolation. These drivers offer functional basic, reinforced isolated, UL 1577, and VDE 0884 certified products. The isolation allows for very large voltage swings (e.g. ±1200V). These isolated drivers incorporate the most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET, and GaN HEMT driving.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

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